NDUL03N150CG
MOSFET. Datasheet pdf. Equivalent
Type Designator: NDUL03N150CG
Marking Code: 03N150C
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.9
V
|Id|ⓘ - Maximum Drain Current: 2.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 34
nC
trⓘ - Rise Time: 24
nS
Cossⓘ -
Output Capacitance: 70
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 10.5
Ohm
Package:
TO-3PF
NDUL03N150CG
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NDUL03N150CG
Datasheet (PDF)
..1. Size:173K onsemi
ndul03n150c ndul03n150cg.pdf
Ordering number : ENA2218NDUL03N150CN-Channel Power MOSFEThttp://onsemi.com1500V, 2.5A, 10.5 , TO-3PF-3LFeatures ON-resistance RDS(on)=8 (typ.) Input capacitance Ciss=650pF (typ.) 10V driveTO-3PF-3LSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain to Source Voltage VDSS 1500 VGate to Source Voltage VGSS
3.1. Size:262K onsemi
ndul03n150c.pdf
Ordering number : ENA2218NDUL03N150CN-Channel Power MOSFEThttp://onsemi.com1500V, 2.5A, 10.5 , TO-3PF-3LFeatures ON-resistance RDS(on)=8 (typ.) Input capacitance Ciss=650pF (typ.) 10V driveTO-3PF-3LSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain to Source Voltage VDSS 1500 VGate to Source Voltage VGSS
9.1. Size:560K onsemi
ndul09n150c ndul09n150cg.pdf
NDUL09N150C Power MOSFET www.onsemi.com 1500V, 3.0, 9A, N-Channel Features Electrical Connection Low On-Resistance High Speed Switching N-Channel Ultra High Voltage 100% Avalanche Tested Pb-Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Value UnitDrain to Source Voltage VDSS 1500 VGate to Source
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