SML50A19 Datasheet and Replacement
Type Designator: SML50A19
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Id|ⓘ - Maximum Drain Current: 18.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 3600 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
Package: TO3
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SML50A19 Datasheet (PDF)
sml50a19.pdf

SML50A19TO3 Package Outline.Dimensions in mm (inches)NCHANNEL25.15 (0.99) ENHANCEMENT MODE6.35 (0.25)26.67 (1.05)9.15 (0.36)10.67 (0.42)HIGH VOLTAGE11.18 (0.44) 1.52 (0.06)3.43 (0.135)POWER MOSFETSVDSS 500V1 2ID(cont) 18.5A3(case)RDS(on) 0.2403.84 (0.151)4.09 (0.161)7.92 (0.312)12.70 (0.50) Faster Switching Lower LeakagePin 1
sml50a15.pdf

SML50A15TO3 Package Outline.Dimensions in mm (inches)NCHANNEL25.15 (0.99) ENHANCEMENT MODE6.35 (0.25)26.67 (1.05)9.15 (0.36)10.67 (0.42)HIGH VOLTAGE11.18 (0.44) 1.52 (0.06)3.43 (0.135)POWER MOSFETSVDSS 500V1 2ID(cont) 14.7A3(case)RDS(on) 0.3003.84 (0.151)4.09 (0.161)7.92 (0.312)12.70 (0.50) Faster Switching Lower LeakagePin 1
sml50a23.pdf

SML50A23TO3 Package Outline.NCHANNELDimensions in mm (inches)ENHANCEMENT MODE25.15 (0.99)6.35 (0.25)26.67 (1.05)9.15 (0.36)HIGH VOLTAGE10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)POWER MOSFETSVDSS 500V1 2ID(cont) 23ARDS(on) 0.203(case)3.84 (0.151)4.09 (0.161) Faster Switching7.92 (0.312)12.70 (0.50) Lower Leakage TO
sml50a21.pdf

SML50A21TO3 Package Outline.Dimensions in mm (inches)NCHANNEL25.15 (0.99) ENHANCEMENT MODE6.35 (0.25)26.67 (1.05)9.15 (0.36)10.67 (0.42)HIGH VOLTAGE11.18 (0.44) 1.52 (0.06)3.43 (0.135)POWER MOSFETSVDSS 500V1 2ID(cont) 21A3(case)RDS(on) 0.2203.84 (0.151)4.09 (0.161)7.92 (0.312)12.70 (0.50) Faster Switching Lower LeakagePin 1
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Keywords - SML50A19 MOSFET datasheet
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History: TK2P60D | IRFBG20



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