NP100N04MUH Datasheet. Specs and Replacement

Type Designator: NP100N04MUH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 288 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 1400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm

Package: TO-220

NP100N04MUH substitution

- MOSFET ⓘ Cross-Reference Search

 

NP100N04MUH datasheet

 ..1. Size:353K  renesas
 np100n04muh np100n04nuh np100n04puh.pdf pdf_icon

NP100N04MUH

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 5.1. Size:355K  renesas
 np100n04mdh np100n04ndh np100n04pdh.pdf pdf_icon

NP100N04MUH

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 6.1. Size:224K  renesas
 np100n04puk.pdf pdf_icon

NP100N04MUH

Preliminary Data Sheet NP100N04PUK R07DS0545EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Sep 23, 2011 Description The NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.3 m MAX. ( VGS = 10 V, ID = 50 A ) Low Ciss Ciss = 4700 pF TYP. ( VDS = 25 V ) Designed for... See More ⇒

 6.2. Size:216K  renesas
 np100n04nuj.pdf pdf_icon

NP100N04MUH

Preliminary Data Sheet NP100N04NUJ R07DS0364EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jun 13, 2011 Description The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.0 m MAX. (VGS = 10 V, ID = 50 A) Low Ciss Ciss = 5600 pF TYP. (VDS = 25 V, VGS = 0 V) H... See More ⇒

SHOW MORE

Detailed specifications: NDUL09N150C, NDUL09N150CG, NID9N05ACLT4G, NID9N05CLT4G, NILMS4501NR2, NILMS4501NR2G, NMSD200B01-7, NP100N04MDH, IRF640, NP100N04NDH, NP100N04NUH, NP100N04NUJ, NP100N04PDH, NP100N04PUH, NP100N04PUK, NP100N055MDH, NP100N055MUH

Keywords - NP100N04MUH MOSFET specs

 NP100N04MUH cross reference

 NP100N04MUH equivalent finder

 NP100N04MUH pdf lookup

 NP100N04MUH substitution

 NP100N04MUH replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility