All MOSFET. NP100N04MUH Datasheet

 

NP100N04MUH MOSFET. Datasheet pdf. Equivalent


   Type Designator: NP100N04MUH
   Marking Code: 100N04UH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 288 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 110 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 1400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: TO-220

 NP100N04MUH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NP100N04MUH Datasheet (PDF)

 ..1. Size:353K  renesas
 np100n04muh np100n04nuh np100n04puh.pdf

NP100N04MUH NP100N04MUH

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 5.1. Size:355K  renesas
 np100n04mdh np100n04ndh np100n04pdh.pdf

NP100N04MUH NP100N04MUH

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 6.1. Size:224K  renesas
 np100n04puk.pdf

NP100N04MUH NP100N04MUH

Preliminary Data Sheet NP100N04PUK R07DS0545EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Sep 23, 2011Description The NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.3 m MAX. ( VGS = 10 V, ID = 50 A ) Low Ciss: Ciss = 4700 pF TYP. ( VDS = 25 V ) Designed for

 6.2. Size:216K  renesas
 np100n04nuj.pdf

NP100N04MUH NP100N04MUH

Preliminary Data Sheet NP100N04NUJ R07DS0364EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jun 13, 2011Description The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.0 m MAX. (VGS = 10 V, ID = 50 A) Low Ciss: Ciss = 5600 pF TYP. (VDS = 25 V, VGS = 0 V) H

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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