NP100N04MUH datasheet, аналоги, основные параметры
Наименование производителя: NP100N04MUH
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 288 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 16 ns
Cossⓘ - Выходная емкость: 1400 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0035 Ohm
Тип корпуса: TO-220
Аналог (замена) для NP100N04MUH
- подборⓘ MOSFET транзистора по параметрам
NP100N04MUH даташит
np100n04muh np100n04nuh np100n04puh.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
np100n04mdh np100n04ndh np100n04pdh.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
np100n04puk.pdf
Preliminary Data Sheet NP100N04PUK R07DS0545EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Sep 23, 2011 Description The NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.3 m MAX. ( VGS = 10 V, ID = 50 A ) Low Ciss Ciss = 4700 pF TYP. ( VDS = 25 V ) Designed for
np100n04nuj.pdf
Preliminary Data Sheet NP100N04NUJ R07DS0364EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jun 13, 2011 Description The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.0 m MAX. (VGS = 10 V, ID = 50 A) Low Ciss Ciss = 5600 pF TYP. (VDS = 25 V, VGS = 0 V) H
Другие IGBT... NDUL09N150C, NDUL09N150CG, NID9N05ACLT4G, NID9N05CLT4G, NILMS4501NR2, NILMS4501NR2G, NMSD200B01-7, NP100N04MDH, IRF640, NP100N04NDH, NP100N04NUH, NP100N04NUJ, NP100N04PDH, NP100N04PUH, NP100N04PUK, NP100N055MDH, NP100N055MUH
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