Справочник MOSFET. NP100N04MUH

 

NP100N04MUH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NP100N04MUH
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 288 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 16 ns
   Cossⓘ - Выходная емкость: 1400 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0035 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для NP100N04MUH

 

 

NP100N04MUH Datasheet (PDF)

 ..1. Size:353K  renesas
 np100n04muh np100n04nuh np100n04puh.pdf

NP100N04MUH NP100N04MUH

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 5.1. Size:355K  renesas
 np100n04mdh np100n04ndh np100n04pdh.pdf

NP100N04MUH NP100N04MUH

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 6.1. Size:224K  renesas
 np100n04puk.pdf

NP100N04MUH NP100N04MUH

Preliminary Data Sheet NP100N04PUK R07DS0545EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Sep 23, 2011Description The NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.3 m MAX. ( VGS = 10 V, ID = 50 A ) Low Ciss: Ciss = 4700 pF TYP. ( VDS = 25 V ) Designed for

 6.2. Size:216K  renesas
 np100n04nuj.pdf

NP100N04MUH NP100N04MUH

Preliminary Data Sheet NP100N04NUJ R07DS0364EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jun 13, 2011Description The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.0 m MAX. (VGS = 10 V, ID = 50 A) Low Ciss: Ciss = 5600 pF TYP. (VDS = 25 V, VGS = 0 V) H

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top