NP100N04NUH Specs and Replacement
Type Designator: NP100N04NUH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 288 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 1400 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: TO-262
NP100N04NUH substitution
NP100N04NUH datasheet
np100n04muh np100n04nuh np100n04puh.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
np100n04nuj.pdf
Preliminary Data Sheet NP100N04NUJ R07DS0364EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jun 13, 2011 Description The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.0 m MAX. (VGS = 10 V, ID = 50 A) Low Ciss Ciss = 5600 pF TYP. (VDS = 25 V, VGS = 0 V) H... See More ⇒
np100n04mdh np100n04ndh np100n04pdh.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
np100n04puk.pdf
Preliminary Data Sheet NP100N04PUK R07DS0545EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Sep 23, 2011 Description The NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.3 m MAX. ( VGS = 10 V, ID = 50 A ) Low Ciss Ciss = 4700 pF TYP. ( VDS = 25 V ) Designed for... See More ⇒
Detailed specifications: NID9N05ACLT4G , NID9N05CLT4G , NILMS4501NR2 , NILMS4501NR2G , NMSD200B01-7 , NP100N04MDH , NP100N04MUH , NP100N04NDH , IRLZ44N , NP100N04NUJ , NP100N04PDH , NP100N04PUH , NP100N04PUK , NP100N055MDH , NP100N055MUH , NP100N055NDH , NP100N055NUH .
History: HSP120N08 | DHP035N04 | FQPF44N08T | STS6409 | TPCS8211 | FDP050AN06A0 | DMG1016UDW
Keywords - NP100N04NUH MOSFET specs
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NP100N04NUH replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: HSP120N08 | DHP035N04 | FQPF44N08T | STS6409 | TPCS8211 | FDP050AN06A0 | DMG1016UDW
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