NP100N04NUH PDF and Equivalents Search

 

NP100N04NUH Specs and Replacement


   Type Designator: NP100N04NUH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 288 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 1400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: TO-262
 

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NP100N04NUH datasheet

 ..1. Size:353K  renesas
np100n04muh np100n04nuh np100n04puh.pdf pdf_icon

NP100N04NUH

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 4.1. Size:216K  renesas
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NP100N04NUH

Preliminary Data Sheet NP100N04NUJ R07DS0364EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jun 13, 2011 Description The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.0 m MAX. (VGS = 10 V, ID = 50 A) Low Ciss Ciss = 5600 pF TYP. (VDS = 25 V, VGS = 0 V) H... See More ⇒

 5.1. Size:355K  renesas
np100n04mdh np100n04ndh np100n04pdh.pdf pdf_icon

NP100N04NUH

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 6.1. Size:224K  renesas
np100n04puk.pdf pdf_icon

NP100N04NUH

Preliminary Data Sheet NP100N04PUK R07DS0545EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Sep 23, 2011 Description The NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.3 m MAX. ( VGS = 10 V, ID = 50 A ) Low Ciss Ciss = 4700 pF TYP. ( VDS = 25 V ) Designed for... See More ⇒

Detailed specifications: NID9N05ACLT4G , NID9N05CLT4G , NILMS4501NR2 , NILMS4501NR2G , NMSD200B01-7 , NP100N04MDH , NP100N04MUH , NP100N04NDH , IRLZ44N , NP100N04NUJ , NP100N04PDH , NP100N04PUH , NP100N04PUK , NP100N055MDH , NP100N055MUH , NP100N055NDH , NP100N055NUH .

History: HSP120N08 | DHP035N04 | FQPF44N08T | STS6409 | TPCS8211 | FDP050AN06A0 | DMG1016UDW

Keywords - NP100N04NUH MOSFET specs

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