All MOSFET. NP100N04NUJ Datasheet

 

NP100N04NUJ Datasheet and Replacement


   Type Designator: NP100N04NUJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 220 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 920 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: TO-262
 

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NP100N04NUJ Datasheet (PDF)

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NP100N04NUJ

Preliminary Data Sheet NP100N04NUJ R07DS0364EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jun 13, 2011Description The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.0 m MAX. (VGS = 10 V, ID = 50 A) Low Ciss: Ciss = 5600 pF TYP. (VDS = 25 V, VGS = 0 V) H

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NP100N04NUJ

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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 np100n04mdh np100n04ndh np100n04pdh.pdf pdf_icon

NP100N04NUJ

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 6.1. Size:224K  renesas
 np100n04puk.pdf pdf_icon

NP100N04NUJ

Preliminary Data Sheet NP100N04PUK R07DS0545EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Sep 23, 2011Description The NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.3 m MAX. ( VGS = 10 V, ID = 50 A ) Low Ciss: Ciss = 4700 pF TYP. ( VDS = 25 V ) Designed for

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Datasheet: NID9N05CLT4G , NILMS4501NR2 , NILMS4501NR2G , NMSD200B01-7 , NP100N04MDH , NP100N04MUH , NP100N04NDH , NP100N04NUH , IRFB4110 , NP100N04PDH , NP100N04PUH , NP100N04PUK , NP100N055MDH , NP100N055MUH , NP100N055NDH , NP100N055NUH , NP100N055PDH .

History: NP100N04PUK | NP100N055MDH | 2SK2640-01MR | NP88N055MLE | TPC8049-H | UT2302G-AE2-R | RFP2N10

Keywords - NP100N04NUJ MOSFET datasheet

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