NP100N04NUJ Datasheet. Specs and Replacement

Type Designator: NP100N04NUJ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 220 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 920 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: TO-262

NP100N04NUJ substitution

- MOSFET ⓘ Cross-Reference Search

 

NP100N04NUJ datasheet

 ..1. Size:216K  renesas
 np100n04nuj.pdf pdf_icon

NP100N04NUJ

Preliminary Data Sheet NP100N04NUJ R07DS0364EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jun 13, 2011 Description The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.0 m MAX. (VGS = 10 V, ID = 50 A) Low Ciss Ciss = 5600 pF TYP. (VDS = 25 V, VGS = 0 V) H... See More ⇒

 4.1. Size:353K  renesas
 np100n04muh np100n04nuh np100n04puh.pdf pdf_icon

NP100N04NUJ

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 5.1. Size:355K  renesas
 np100n04mdh np100n04ndh np100n04pdh.pdf pdf_icon

NP100N04NUJ

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 6.1. Size:224K  renesas
 np100n04puk.pdf pdf_icon

NP100N04NUJ

Preliminary Data Sheet NP100N04PUK R07DS0545EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Sep 23, 2011 Description The NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.3 m MAX. ( VGS = 10 V, ID = 50 A ) Low Ciss Ciss = 4700 pF TYP. ( VDS = 25 V ) Designed for... See More ⇒

SHOW MORE

Detailed specifications: NID9N05CLT4G, NILMS4501NR2, NILMS4501NR2G, NMSD200B01-7, NP100N04MDH, NP100N04MUH, NP100N04NDH, NP100N04NUH, IRFB4110, NP100N04PDH, NP100N04PUH, NP100N04PUK, NP100N055MDH, NP100N055MUH, NP100N055NDH, NP100N055NUH, NP100N055PDH

Keywords - NP100N04NUJ MOSFET specs

 NP100N04NUJ cross reference

 NP100N04NUJ equivalent finder

 NP100N04NUJ pdf lookup

 NP100N04NUJ substitution

 NP100N04NUJ replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs