NP16N04YUG Datasheet. Specs and Replacement

Type Designator: NP16N04YUG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 83 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: HSON

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NP16N04YUG datasheet

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NP16N04YUG

Preliminary Data Sheet R07DS0362EJ0100 NP16N04YUG Rev.1.00 Jun 13, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP16N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 25 m MAX. (VGS = 10 V, ID = 8 A) Low Ciss Ciss = 740 pF TYP. (VDS = 25 V, VGS = 0 V) Designed f... See More ⇒

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NP16N04YUG

Data Sheet NP16N06YLL R07DS1124EJ0100 60 V 16 A N-channel Power MOS FET Rev.1.00 Application Automotive Oct 30, 2013 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Low on-state resistance RDS(on) = 35 m MAX. (VGS = 10 V, ID = 8 A) Low Ciss Ciss = 400 pF TYP. (VDS = 25 V,... See More ⇒

Detailed specifications: NP15P06SLG, NP160N04TDG, NP160N04TUG, NP160N04TUJ, NP160N04TUK, NP160N055TUJ, NP160N055TUK, NP161N04TUG, IRF530, NP16N06YLL, NP180N04TUG, NP180N04TUJ, NP180N04TUK, NP180N055TUJ, NP180N055TUK, NP20N10YDF, NP20P04SLG

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