2SK1596 Datasheet and Replacement

   Type Designator: 2SK1596
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 100 nC
   tr ⓘ - Rise Time: 1000 nS
   Cossⓘ - Output Capacitance: 1800 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO220F

2SK1596 substitution

- MOSFET ⓘ Cross-Reference Search

2SK1596 Datasheet (PDF)

..1. Size:329K 1
2sk1596.pdf pdf_icon

8.1. Size:375K 1
2sk1591.pdf pdf_icon

8.2. Size:300K 1
2sk1592.pdf pdf_icon

8.3. Size:293K 1
2sk1593.pdf pdf_icon

8.4. Size:310K 1
2sk1594.pdf pdf_icon

8.5. Size:244K 1
2sk1590.pdf pdf_icon

8.6. Size:89K renesas
2sk1590c.pdf pdf_icon

Preliminary Data Sheet 2SK1590C R07DS1276EJ0200Rev.2.00N-CHANNEL MOSFET FOR SWITCHING Jun 24, 2015Description The 2SK1590C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features Directly driven by a 4.5 V power source. Low on-state resistance RDS(on)1 = 2.7 MAX. (VGS = 10

8.7. Size:1002K kexin
2sk1592.pdf pdf_icon

SMD Type MOSFETN-Channel MOSFET2SK15921.70 0.1 Features VDS (V) = 60V ID = 0.5A RDS(ON) 2.5 (VGS = 4V) 0.42 0.10.46 0.1 RDS(ON) 2 (VGS = 10V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gate-Source Voltage VGS 20 Continuous Drain Current ID 0.5A Pulse

8.8. Size:977K kexin
2sk1593.pdf pdf_icon

SMD Type MOSFETN-Channel MOSFET2SK15931.70 0.1 Features VDS (V) = 100V ID = 0.5A RDS(ON) 6 (VGS = 4V)0.42 0.10.46 0.1 RDS(ON) 5 (VGS = 10V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 100V Gate-Source Voltage VGS 20 Continuous Drain Current ID 0.5A Puls

8.9. Size:1249K kexin
2sk1590-3.pdf pdf_icon

SMD Type MOSFETN-Channel MOSFET2SK1590SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) = 60V ID = 0.2 A1 2+0.02+0.10.15 -0.02 RDS(ON) 3 (VGS = 10V) 0.95-0.1+0.11.9 -0.2 RDS(ON) 6 (VGS = 4V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VD

8.10. Size:1239K kexin
2sk1590.pdf pdf_icon

SMD Type MOSFETN-Channel MOSFET2SK1590SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features VDS (V) = 60V1 2 ID = 0.2 A+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 RDS(ON) 3 (VGS = 10V) RDS(ON) 6 (VGS = 4V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 6

8.11. Size:443K cn shikues
2sk1590.pdf pdf_icon

N-Channel Enhancement Mode MOSFET Feature SOT-23 60V/0.2A, RDS(ON) = 3.5(MAX) @VGS = 5V. Id = 0.2A RDS(ON) = 10(MAX) @VGS = 2.75V. Id = 0.2A Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. Low Threshold Voltage ( 0.5V1.5V ) Make it Ideal for Low Voltage Applications. SOT-23 for Surface Mount Package. Applications 1Gate 2Sourc

8.12. Size:1268K cn vbsemi
2sk1591.pdf pdf_icon

2SK1591www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition100 2.8 at VGS = 10 V Low Threshold: 2 V (typ.)260 Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output Leakage TrenchFET Power MOSFET Compliant to RoHS Directive 2002/9

8.13. Size:841K cn vbsemi
2sk1590.pdf pdf_icon

2SK1590www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG 1

Datasheet: 2SK1587 , 2SK1588 , 2SK1589 , 2SK1590 , 2SK1591 , 2SK1592 , 2SK1593 , 2SK1594 , SPW47N60C3 , 2SK162 , 2SK163 , 2SK1664 , 2SK1712 , 2SK1748 , 2SK1749 , 2SK1750 , 2SK1751 .