2SK1596. Аналоги и основные параметры
Наименование производителя: 2SK1596
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 35 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 1000 ns
Cossⓘ - Выходная емкость: 1800 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
Тип корпуса: TO220F
Аналог (замена) для 2SK1596
- подборⓘ MOSFET транзистора по параметрам
2SK1596 даташит
8.6. Size:89K renesas
2sk1590c.pdf 
Preliminary Data Sheet 2SK1590C R07DS1276EJ0200 Rev.2.00 N-CHANNEL MOSFET FOR SWITCHING Jun 24, 2015 Description The 2SK1590C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features Directly driven by a 4.5 V power source. Low on-state resistance RDS(on)1 = 2.7 MAX. (VGS = 10
8.7. Size:1002K kexin
2sk1592.pdf 
SMD Type MOSFET N-Channel MOSFET 2SK1592 1.70 0.1 Features VDS (V) = 60V ID = 0.5A RDS(ON) 2.5 (VGS = 4V) 0.42 0.1 0.46 0.1 RDS(ON) 2 (VGS = 10V) 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 Continuous Drain Current ID 0.5 A Pulse
8.8. Size:977K kexin
2sk1593.pdf 
SMD Type MOSFET N-Channel MOSFET 2SK1593 1.70 0.1 Features VDS (V) = 100V ID = 0.5A RDS(ON) 6 (VGS = 4V) 0.42 0.1 0.46 0.1 RDS(ON) 5 (VGS = 10V) 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 Continuous Drain Current ID 0.5 A Puls
8.9. Size:1249K kexin
2sk1590-3.pdf 
SMD Type MOSFET N-Channel MOSFET 2SK1590 SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 60V ID = 0.2 A 1 2 +0.02 +0.1 0.15 -0.02 RDS(ON) 3 (VGS = 10V) 0.95-0.1 +0.1 1.9 -0.2 RDS(ON) 6 (VGS = 4V) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VD
8.10. Size:1239K kexin
2sk1590.pdf 
SMD Type MOSFET N-Channel MOSFET 2SK1590 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) = 60V 1 2 ID = 0.2 A +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 RDS(ON) 3 (VGS = 10V) RDS(ON) 6 (VGS = 4V) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 6
8.11. Size:443K cn shikues
2sk1590.pdf 
N-Channel Enhancement Mode MOSFET Feature SOT-23 60V/0.2A, RDS(ON) = 3.5 (MAX) @VGS = 5V. Id = 0.2A RDS(ON) = 10 (MAX) @VGS = 2.75V. Id = 0.2A Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. Low Threshold Voltage ( 0.5V 1.5V ) Make it Ideal for Low Voltage Applications. SOT-23 for Surface Mount Package. Applications 1 Gate 2 Sourc
8.12. Size:1268K cn vbsemi
2sk1591.pdf 
2SK1591 www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 100 2.8 at VGS = 10 V Low Threshold 2 V (typ.) 260 Low Input Capacitance 25 pF Fast Switching Speed 25 ns Low Input and Output Leakage TrenchFET Power MOSFET Compliant to RoHS Directive 2002/9
8.13. Size:841K cn vbsemi
2sk1590.pdf 
2SK1590 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 2.8 at VGS = 10 V 60 250 Low Threshold 2 V (typ.) Low Input Capacitance 25 pF Fast Switching Speed 25 ns Low Input and Output Leakage SOT-23 TrenchFET Power MOSFET 1200V ESD Protection G 1
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