NP50P04KDG Datasheet. Specs and Replacement
Type Designator: NP50P04KDG
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 790 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO-263
NP50P04KDG substitution
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NP50P04KDG datasheet
np50p04kdg.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
np50p04slg.pdf
Preliminary Data Sheet R07DS0241EJ0100 NP50P04SLG Rev.1.00 Feb 09, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP50P04SLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on)1 = 9.6 m MAX. (VGS = -10 V, ID = -25 A) RDS(on)2 = 15 m MAX. (VGS = -4.5 V, ID = -25 A) Lo... See More ⇒
np50p04sdg.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
np50p03ydg.pdf
Preliminary Data Sheet NP50P03YDG R07DS0019EJ0200 Rev.2.00 MOS FIELD EFFECT TRANSISTOR Mar 16, 2011 Description The NP50P03YDG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 8.4 m MAX. (VGS = -10 V, ID = -25 A) Low Ciss Ciss = 2300 pF TYP. (VDS = -25 V, VGS = 0 V) Design... See More ⇒
Detailed specifications: NP48N055KHE, NP48N055KLE, NP48N055MHE, NP48N055MLE, NP48N055NHE, NP48N055NLE, NP50N04YUK, NP50P03YDG, 2N7002, NP50P04SDG, NP50P04SLG, NP50P06KDG, NP50P06SDG, NP52N055SUG, NP52N06SLG, NP55N03SUG, NP55N04SUG
Keywords - NP50P04KDG MOSFET specs
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