Справочник MOSFET. NP50P04KDG

 

NP50P04KDG Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NP50P04KDG
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 90 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 45 ns
   Cossⓘ - Выходная емкость: 790 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
   Тип корпуса: TO-263
 

 Аналог (замена) для NP50P04KDG

   - подбор ⓘ MOSFET транзистора по параметрам

 

NP50P04KDG Datasheet (PDF)

 ..1. Size:283K  renesas
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NP50P04KDG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 7.1. Size:233K  renesas
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NP50P04KDG

Preliminary Data Sheet R07DS0241EJ0100NP50P04SLG Rev.1.00Feb 09, 2011MOS FIELD EFFECT TRANSISTOR Description The NP50P04SLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on)1 = 9.6 m MAX. (VGS = -10 V, ID = -25 A) RDS(on)2 = 15 m MAX. (VGS = -4.5 V, ID = -25 A) Lo

 7.2. Size:312K  renesas
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NP50P04KDG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:230K  renesas
np50p03ydg.pdfpdf_icon

NP50P04KDG

Preliminary Data Sheet NP50P03YDG R07DS0019EJ0200Rev.2.00MOS FIELD EFFECT TRANSISTOR Mar 16, 2011Description The NP50P03YDG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 8.4 m MAX. (VGS = -10 V, ID = -25 A) Low Ciss: Ciss = 2300 pF TYP. (VDS = -25 V, VGS = 0 V) Design

Другие MOSFET... NP48N055KHE , NP48N055KLE , NP48N055MHE , NP48N055MLE , NP48N055NHE , NP48N055NLE , NP50N04YUK , NP50P03YDG , K4145 , NP50P04SDG , NP50P04SLG , NP50P06KDG , NP50P06SDG , NP52N055SUG , NP52N06SLG , NP55N03SUG , NP55N04SUG .

History: 1H05 | SRT10N090L | STH12N120K5-2

 

 
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