NP50P04KDG Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NP50P04KDG
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 90 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 45 ns
Cossⓘ - Выходная емкость: 790 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
Тип корпуса: TO-263
Аналог (замена) для NP50P04KDG
NP50P04KDG Datasheet (PDF)
np50p04kdg.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
np50p04slg.pdf

Preliminary Data Sheet R07DS0241EJ0100NP50P04SLG Rev.1.00Feb 09, 2011MOS FIELD EFFECT TRANSISTOR Description The NP50P04SLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on)1 = 9.6 m MAX. (VGS = -10 V, ID = -25 A) RDS(on)2 = 15 m MAX. (VGS = -4.5 V, ID = -25 A) Lo
np50p04sdg.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
np50p03ydg.pdf

Preliminary Data Sheet NP50P03YDG R07DS0019EJ0200Rev.2.00MOS FIELD EFFECT TRANSISTOR Mar 16, 2011Description The NP50P03YDG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 8.4 m MAX. (VGS = -10 V, ID = -25 A) Low Ciss: Ciss = 2300 pF TYP. (VDS = -25 V, VGS = 0 V) Design
Другие MOSFET... NP48N055KHE , NP48N055KLE , NP48N055MHE , NP48N055MLE , NP48N055NHE , NP48N055NLE , NP50N04YUK , NP50P03YDG , K4145 , NP50P04SDG , NP50P04SLG , NP50P06KDG , NP50P06SDG , NP52N055SUG , NP52N06SLG , NP55N03SUG , NP55N04SUG .
History: 1H05 | SRT10N090L | STH12N120K5-2
History: 1H05 | SRT10N090L | STH12N120K5-2



Список транзисторов
Обновления
MOSFET: JBE084M | JBE083NS | JBE083M | JMH70R430AK | JMH70R430AF | JMH65R980APLN | JMH65R980AKQ | JMH65R980AK | JMH65R980AF | JMH65R980ACFP | JMH65R640AK | JMH65R600MK | JMH65R600MF | JMPL1025AK | JMPL1025AE | JMPL0648PKQ
Popular searches
p0603bd mosfet | p157r5nt | ptp03n04n | sm4377 mosfet datasheet | tip31c reemplazo | 2sa906 | c2389 transistor | c2634 transistor