All MOSFET. NP50P06KDG Datasheet

 

NP50P06KDG Datasheet and Replacement


   Type Designator: NP50P06KDG
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: TO-263
 

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NP50P06KDG Datasheet (PDF)

 ..1. Size:286K  renesas
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NP50P06KDG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 7.1. Size:302K  renesas
np50p06sdg.pdf pdf_icon

NP50P06KDG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:283K  renesas
np50p04kdg.pdf pdf_icon

NP50P06KDG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:233K  renesas
np50p04slg.pdf pdf_icon

NP50P06KDG

Preliminary Data Sheet R07DS0241EJ0100NP50P04SLG Rev.1.00Feb 09, 2011MOS FIELD EFFECT TRANSISTOR Description The NP50P04SLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on)1 = 9.6 m MAX. (VGS = -10 V, ID = -25 A) RDS(on)2 = 15 m MAX. (VGS = -4.5 V, ID = -25 A) Lo

Datasheet: NP48N055MLE , NP48N055NHE , NP48N055NLE , NP50N04YUK , NP50P03YDG , NP50P04KDG , NP50P04SDG , NP50P04SLG , 5N60 , NP50P06SDG , NP52N055SUG , NP52N06SLG , NP55N03SUG , NP55N04SUG , NP55N055SDG , NP55N055SUG , NP60N03KUG .

History: SSPL5505

Keywords - NP50P06KDG MOSFET datasheet

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