All MOSFET. NP50P06SDG Datasheet

 

NP50P06SDG Datasheet and Replacement


   Type Designator: NP50P06SDG
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 84 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0165 Ohm
   Package: TO-252
 

 NP50P06SDG substitution

   - MOSFET ⓘ Cross-Reference Search

 

NP50P06SDG Datasheet (PDF)

 ..1. Size:302K  renesas
np50p06sdg.pdf pdf_icon

NP50P06SDG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 7.1. Size:286K  renesas
np50p06kdg.pdf pdf_icon

NP50P06SDG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:283K  renesas
np50p04kdg.pdf pdf_icon

NP50P06SDG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:233K  renesas
np50p04slg.pdf pdf_icon

NP50P06SDG

Preliminary Data Sheet R07DS0241EJ0100NP50P04SLG Rev.1.00Feb 09, 2011MOS FIELD EFFECT TRANSISTOR Description The NP50P04SLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on)1 = 9.6 m MAX. (VGS = -10 V, ID = -25 A) RDS(on)2 = 15 m MAX. (VGS = -4.5 V, ID = -25 A) Lo

Datasheet: NP48N055NHE , NP48N055NLE , NP50N04YUK , NP50P03YDG , NP50P04KDG , NP50P04SDG , NP50P04SLG , NP50P06KDG , AO3400 , NP52N055SUG , NP52N06SLG , NP55N03SUG , NP55N04SUG , NP55N055SDG , NP55N055SUG , NP60N03KUG , NP60N03SUG .

History: WMS690N15HG2 | HRLW250N10K | JFPC16N50C | SIRA72DP | IRFR4510TR | TMA8N60H | TMA20N65HG

Keywords - NP50P06SDG MOSFET datasheet

 NP50P06SDG cross reference
 NP50P06SDG equivalent finder
 NP50P06SDG lookup
 NP50P06SDG substitution
 NP50P06SDG replacement

 

 
Back to Top

 


 
.