IXFA36N20X3 MOSFET Datasheet: N-Ch, 200V, 36A. Full specification with pinout and replacement list

IXFA36N20X3 Specs and Replacement

Type Designator: IXFA36N20X3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 170 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 36 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: TO-263

IXFA36N20X3 substitution

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IXFA36N20X3 datasheet

..1. Size:310K ixys
ixfy36n20x3 ixfa36n20x3 ixfp36n20x3.pdf pdf_icon

VDSS = 200V X3-Class HiPERFETTM IXFY36N20X3 ID25 = 36A Power MOSFET IXFA36N20X3 RDS(on) 45m IXFP36N20X3 N-Channel Enhancement Mode TO-252 (IXFY) G S D (Tab) TO-263 (IXFA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 200 V G S VDGR TJ = 25 C to 150 C, RGS = 1M 200 V D (Tab) VGSS Continuous 20 V TO-220... See More ⇒

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ixfa36n30p3 ixfp36n30p3.pdf pdf_icon

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9.1. Size:565K ixys
ixfa3n120 ixfp3n120.pdf pdf_icon

IXFA 3N120 VDSS =1200 V HiPerFETTM IXFP 3N120 ID25 = 3 A Power MOSFETs RDS(on) = 4.5 trr 300 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220 (IXFP) VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1200 V D (TAB) VGS Conti... See More ⇒

9.2. Size:206K ixys
ixfa30n60x ixfp30n60x.pdf pdf_icon

Advance Technical Information X-Class HiPerFETTM VDSS = 600V IXFA30N60X Power MOSFET ID25 = 30A IXFP30N60X RDS(on) 155m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXFA) Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXFP) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C, RGS = 1M ... See More ⇒