NP83P06PDG Specs and Replacement
Type Designator: NP83P06PDG
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 83 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 1140 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm
Package: TO-263
NP83P06PDG substitution
- MOSFET ⓘ Cross-Reference Search
NP83P06PDG datasheet
np83p06pdg.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
np83p04pdg.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
Detailed specifications: NP82N055PUG, NP82N06MLG, NP82N06NLG, NP82N06PDG, NP82N06PLG, NP82N10PUF, NP82P04PLF, NP83P04PDG, BS170, NP84N04CHE, NP84N04DHE, NP84N04EHE, NP84N04KHE, NP84N04MHE, NP84N04NHE, NP84N055CHE, NP84N055CLE
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