Справочник MOSFET. NP83P06PDG

 

NP83P06PDG Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NP83P06PDG
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 83 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 1140 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0088 Ohm
   Тип корпуса: TO-263
 

 Аналог (замена) для NP83P06PDG

   - подбор ⓘ MOSFET транзистора по параметрам

 

NP83P06PDG Datasheet (PDF)

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NP83P06PDG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:291K  renesas
 np83p04pdg.pdf pdf_icon

NP83P06PDG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Другие MOSFET... NP82N055PUG , NP82N06MLG , NP82N06NLG , NP82N06PDG , NP82N06PLG , NP82N10PUF , NP82P04PLF , NP83P04PDG , 18N50 , NP84N04CHE , NP84N04DHE , NP84N04EHE , NP84N04KHE , NP84N04MHE , NP84N04NHE , NP84N055CHE , NP84N055CLE .

History: 2SK1471 | HMS150N04D | IPB100N12S3-05 | 2SK1637 | CRST037N10N | TPCS8105 | WFP2N60

 

 
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