All MOSFET. 2SK163 Datasheet

 

2SK163 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK163

Type of Transistor: JFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.4 W

Maximum Drain-Source Voltage |Vds|: 50 V

Maximum Drain Current |Id|: 0.03 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 150 Ohm

Package: TO92

2SK163 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK163 Datasheet (PDF)

0.1. 2sk104 2sk105 2sk162 2sk163 2sk193 2sk195 2sk505 2sk507 2sk514 2sk518 2sk519 2sk523 2sk533 2sk660 2sk997 2sk998 2sk1000 2sk1109.pdf Size:515K _1

2SK163

0.2. 2sk1637.pdf Size:232K _renesas

2SK163
2SK163

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.3. 2sk1636.pdf Size:95K _renesas

2SK163
2SK163

2SK1636(L), 2SK1636(S) Silicon N Channel MOS FET REJ03G0961-0200 (Previous: ADE-208-1304) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AE-A RENESAS Pac

0.4. 2sk163.pdf Size:57K _nec

2SK163
2SK163

 0.5. 2sk1635.pdf Size:42K _panasonic

2SK163

0.6. 2sk1637 2sk2422.pdf Size:34K _hitachi

2SK163
2SK163

2SK1637, 2SK2422Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converterOutlineTO-220FMD1231. GateG2. Drain3. SourceS2SK1637, 2SK2422Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating

0.7. 2sk1630.pdf Size:212K _inchange_semiconductor

2SK163
2SK163

isc N-Channel MOSFET Transistor 2SK1630DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V =700V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX

0.8. 2sk1633.pdf Size:207K _inchange_semiconductor

2SK163
2SK163

isc N-Channel MOSFET Transistor 2SK1633DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V =700V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX

0.9. 2sk1639.pdf Size:213K _inchange_semiconductor

2SK163
2SK163

isc N-Channel MOSFET Transistor 2SK1639DESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX

0.10. 2sk1635.pdf Size:214K _inchange_semiconductor

2SK163
2SK163

isc N-Channel MOSFET Transistor 2SK1635DESCRIPTIONDrain Current I = 50A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current,low voltageABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 60 VDSS GSV Gate-Sour

0.11. 2sk1631.pdf Size:207K _inchange_semiconductor

2SK163
2SK163

isc N-Channel MOSFET Transistor 2SK1631DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V =700V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX

0.12. 2sk1638.pdf Size:213K _inchange_semiconductor

2SK163
2SK163

isc N-Channel MOSFET Transistor 2SK1638DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX

0.13. 2sk1632.pdf Size:212K _inchange_semiconductor

2SK163
2SK163

isc N-Channel MOSFET Transistor 2SK1632DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V =700V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX

0.14. 2sk1634.pdf Size:216K _inchange_semiconductor

2SK163
2SK163

isc N-Channel MOSFET Transistor 2SK1634DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V =700V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX

Datasheet: 2SK1589 , 2SK1590 , 2SK1591 , 2SK1592 , 2SK1593 , 2SK1594 , 2SK1596 , 2SK162 , 2SK117 , 2SK1664 , 2SK1712 , 2SK1748 , 2SK1749 , 2SK1750 , 2SK1751 , 2SK1752 , 2SK1753 .

 

 
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