All MOSFET. 2SK163 Datasheet

 

2SK163 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK163

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.4 W

Maximum Drain-Source Voltage |Vds|: 50 V

Maximum Drain Current |Id|: 0.03 A

Maximum Junction Temperature (Tj): 150 Β°C

Maximum Drain-Source On-State Resistance (Rds): 500 Ohm

Package: TO92

2SK163 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK163 Datasheet (PDF)

1.1. 2sk1637.pdf Size:232K _update

2SK163
2SK163

ο»ΏTo our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

1.2. 2sk1636.pdf Size:95K _renesas

2SK163
2SK163

2SK1636(L), 2SK1636(S) Silicon N Channel MOS FET REJ03G0961-0200 (Previous: ADE-208-1304) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PR

 1.3. 2sk163.pdf Size:57K _nec

2SK163
2SK163

ο»Ώ

1.4. 2sk1637 2sk2422.pdf Size:34K _hitachi

2SK163
2SK163

2SK1637, 2SK2422 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline TO-220FM D 1 2 3 1. Gate G 2. Drain 3. Source S 2SK1637, 2SK2422 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain

Datasheet: 2SK1589 , 2SK1590 , 2SK1591 , 2SK1592 , 2SK1593 , 2SK1594 , 2SK1596 , 2SK162 , 2SK117 , 2SK1664 , 2SK1712 , 2SK1748 , 2SK1749 , 2SK1750 , 2SK1751 , 2SK1752 , 2SK1753 .

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