NP89N055PUK Specs and Replacement

Type Designator: NP89N055PUK

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 147 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 410 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0044 Ohm

Package: TO-263

NP89N055PUK substitution

- MOSFET ⓘ Cross-Reference Search

 

NP89N055PUK datasheet

 ..1. Size:102K  renesas
 np89n055puk.pdf pdf_icon

NP89N055PUK

Preliminary Data Sheet NP89N055PUK R07DS0569EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Nov 17, 2011 Description The NP89N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 4.0 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss Ciss = 4000 pF TYP. (VDS = 25 V) Designed for au... See More ⇒

 6.1. Size:103K  renesas
 np89n055muk np89n055nuk.pdf pdf_icon

NP89N055PUK

Preliminary Data Sheet NP89N055MUK, NP89N055NUK R07DS0600EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 4.4 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss Ciss = 4000 pF TYP. (VDS = 25 V) D... See More ⇒

 8.1. Size:103K  renesas
 np89n04puk.pdf pdf_icon

NP89N055PUK

Preliminary Data Sheet NP89N04PUK R07DS0562EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Nov 07, 2011 Description The NP89N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.95 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss Ciss = 3900 pF TYP. (VDS = 25 V) Designed for aut... See More ⇒

 8.2. Size:103K  renesas
 np89n04muk np89n04nuk.pdf pdf_icon

NP89N055PUK

Preliminary Data Sheet NP89N04MUK, NP89N04NUK R07DS0599EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.3 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss Ciss = 3900 pF TYP. (VDS = 25 V) Des... See More ⇒

SHOW MORE

Detailed specifications: NP88N075MUE, NP88N075NUE, NP89N04MUK, NP89N04NUK, NP89N04PDK, NP89N04PUK, NP89N055MUK, NP89N055NUK, IRF3710, NP90N03VHG, NP90N03VLG, NP90N03VUG, NP90N04MDH, NP90N04MUG, NP90N04MUH, NP90N04MUK, NP90N04NDH

Keywords - NP89N055PUK MOSFET specs

 NP89N055PUK cross reference

 NP89N055PUK equivalent finder

 NP89N055PUK pdf lookup

 NP89N055PUK substitution

 NP89N055PUK replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility