Справочник MOSFET. NP89N055PUK

 

NP89N055PUK MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NP89N055PUK
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 147 W
   Предельно допустимое напряжение сток-исток |Uds|: 55 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 90 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 68 nC
   Время нарастания (tr): 10 ns
   Выходная емкость (Cd): 410 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0044 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для NP89N055PUK

 

 

NP89N055PUK Datasheet (PDF)

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NP89N055PUK NP89N055PUK

Preliminary Data Sheet NP89N055PUK R07DS0569EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Nov 17, 2011Description The NP89N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 4.0 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V) Designed for au

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NP89N055PUK NP89N055PUK

Preliminary Data Sheet NP89N055MUK, NP89N055NUK R07DS0600EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jan 11, 2012Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 4.4 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V) D

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 np89n04puk.pdf

NP89N055PUK NP89N055PUK

Preliminary Data Sheet NP89N04PUK R07DS0562EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Nov 07, 2011Description The NP89N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.95 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V) Designed for aut

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NP89N055PUK NP89N055PUK

Preliminary Data Sheet NP89N04MUK, NP89N04NUK R07DS0599EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jan 11, 2012Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.3 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V) Des

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 np89n04pdk.pdf

NP89N055PUK NP89N055PUK

Preliminary Data Sheet NP89N04PDK R07DS1016EJ010040 V 90 A N-channel Power MOS FET Rev.1.00Application: Automotive Feb 21, 2013Description The NP89N04PDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.95 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 3900 pF

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