NP90N055PDH
MOSFET. Datasheet pdf. Equivalent
Type Designator: NP90N055PDH
Marking Code: 90N055DH
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 230
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 90
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 135
nC
trⓘ - Rise Time: 9
nS
Cossⓘ -
Output Capacitance: 820
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0051
Ohm
Package:
TO-263
NP90N055PDH
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NP90N055PDH
Datasheet (PDF)
..1. Size:358K renesas
np90n055mdh np90n055ndh np90n055pdh.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
5.1. Size:359K renesas
np90n055muh np90n055nuh np90n055puh.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
6.1. Size:103K renesas
np90n055muk np90n055nuk.pdf
Preliminary Data Sheet NP90N055MUK, NP90N055NUK R07DS0602EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jan 11, 2012Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.8 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V) D
6.2. Size:325K renesas
np90n055vug.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
6.3. Size:102K renesas
np90n055vuk.pdf
Preliminary Data Sheet NP90N055VUK R07DS0578EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Nov 29, 2011Description The NP90N055VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.85 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V) Designed for a
6.4. Size:329K renesas
np90n055vdg.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
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