Справочник MOSFET. NP90N055PDH

 

NP90N055PDH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: NP90N055PDH

Маркировка: 90N055DH

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 230 W

Предельно допустимое напряжение сток-исток (Uds): 55 V

Предельно допустимое напряжение затвор-исток (Ugs): 12 V

Пороговое напряжение включения Ugs(th): 2.5 V

Максимально допустимый постоянный ток стока (Id): 90 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 135 nC

Время нарастания (tr): 9 ns

Выходная емкость (Cd): 820 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.0051 Ohm

Тип корпуса: TO-263

Аналог (замена) для NP90N055PDH

 

 

NP90N055PDH Datasheet (PDF)

1.1. np90n055muh np90n055nuh np90n055puh.pdf Size:359K _update-mosfet

NP90N055PDH
NP90N055PDH

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

1.2. np90n055mdh np90n055ndh np90n055pdh.pdf Size:358K _update-mosfet

NP90N055PDH
NP90N055PDH

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 2.1. np90n055vdg.pdf Size:329K _update-mosfet

NP90N055PDH
NP90N055PDH

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2.2. np90n055vuk.pdf Size:102K _update-mosfet

NP90N055PDH
NP90N055PDH

 Preliminary Data Sheet NP90N055VUK R07DS0578EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Nov 29, 2011 Description The NP90N055VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 3.85 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V)  Designed for a

 2.3. np90n055muk np90n055nuk.pdf Size:103K _update-mosfet

NP90N055PDH
NP90N055PDH

 Preliminary Data Sheet NP90N055MUK, NP90N055NUK R07DS0602EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 3.8 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V)  D

2.4. np90n055vug.pdf Size:325K _update-mosfet

NP90N055PDH
NP90N055PDH

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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