All MOSFET. NP90N055PUH Datasheet

 

NP90N055PUH MOSFET. Datasheet pdf. Equivalent

Type Designator: NP90N055PUH

Marking Code: 90N055UH

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 230 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 90 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 100 nC

Rise Time (tr): 14 nS

Drain-Source Capacitance (Cd): 820 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0054 Ohm

Package: TO-263

NP90N055PUH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NP90N055PUH Datasheet (PDF)

1.1. np90n055muh np90n055nuh np90n055puh.pdf Size:359K _update-mosfet

NP90N055PUH
NP90N055PUH

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

1.2. np90n055mdh np90n055ndh np90n055pdh.pdf Size:358K _update-mosfet

NP90N055PUH
NP90N055PUH

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 2.1. np90n055vdg.pdf Size:329K _update-mosfet

NP90N055PUH
NP90N055PUH

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2.2. np90n055vuk.pdf Size:102K _update-mosfet

NP90N055PUH
NP90N055PUH

 Preliminary Data Sheet NP90N055VUK R07DS0578EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Nov 29, 2011 Description The NP90N055VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 3.85 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V)  Designed for a

 2.3. np90n055muk np90n055nuk.pdf Size:103K _update-mosfet

NP90N055PUH
NP90N055PUH

 Preliminary Data Sheet NP90N055MUK, NP90N055NUK R07DS0602EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 3.8 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V)  D

2.4. np90n055vug.pdf Size:325K _update-mosfet

NP90N055PUH
NP90N055PUH

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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