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NP90N06VLG PDF Specs and Replacement


   Type Designator: NP90N06VLG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 105 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
   Package: TO-252
 

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NP90N06VLG PDF Specs

 ..1. Size:329K  renesas
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NP90N06VLG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.1. Size:330K  renesas
np90n04vlg.pdf pdf_icon

NP90N06VLG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.2. Size:103K  renesas
np90n055muk np90n055nuk.pdf pdf_icon

NP90N06VLG

Preliminary Data Sheet NP90N055MUK, NP90N055NUK R07DS0602EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.8 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss Ciss = 4900 pF TYP. (VDS = 25 V) D... See More ⇒

 8.3. Size:103K  renesas
np90n04muk np90n04nuk.pdf pdf_icon

NP90N06VLG

Preliminary Data Sheet NP90N04MUK, NP90N04NUK R07DS0601EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss Ciss = 4700 pF TYP. (VDS = 25 V) Des... See More ⇒

Detailed specifications: NP90N055NDH , NP90N055NUH , NP90N055NUK , NP90N055PDH , NP90N055PUH , NP90N055VDG , NP90N055VUG , NP90N055VUK , AON6380 , NSVJ3557SA3 , NTHL082N65S3F , SWI069R10VS , SWD069R10VS , SWP069R10VS , IPP050N06NG , IPI05CNE8NG , IPP054NE8NG .

Keywords - NP90N06VLG MOSFET specs

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