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NP90N06VLG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: NP90N06VLG

Маркировка: 90N06LG

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 105 W

Предельно допустимое напряжение сток-исток (Uds): 60 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 2.5 V

Максимально допустимый постоянный ток стока (Id): 90 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 90 nC

Время нарастания (tr): 13 ns

Выходная емкость (Cd): 370 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.0078 Ohm

Тип корпуса: TO-252

Аналог (замена) для NP90N06VLG

 

 

NP90N06VLG Datasheet (PDF)

1.1. np90n06vlg.pdf Size:329K _update-mosfet

NP90N06VLG
NP90N06VLG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.1. np90n04vlk.pdf Size:170K _update-mosfet

NP90N06VLG
NP90N06VLG

 Preliminary Data Sheet NP90N04VLK R07DS1236EJ0100 40 V – 90 A – N-channel Power MOS FET Rev.1.00 Application: Automotive Nov 10, 2014 Description The NP90N04VLK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 2.8 mΩ MAX. (VGS = 10 V, ID = 45 A) • Low Ciss: Ciss = 3800 pF T

4.2. np90n04vlg.pdf Size:330K _update-mosfet

NP90N06VLG
NP90N06VLG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 4.3. np90n04vug.pdf Size:311K _update-mosfet

NP90N06VLG
NP90N06VLG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.4. np90n055muh np90n055nuh np90n055puh.pdf Size:359K _update-mosfet

NP90N06VLG
NP90N06VLG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 4.5. np90n03vug.pdf Size:311K _update-mosfet

NP90N06VLG
NP90N06VLG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.6. np90n04mug.pdf Size:320K _update-mosfet

NP90N06VLG
NP90N06VLG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.7. np90n04vdk.pdf Size:105K _update-mosfet

NP90N06VLG
NP90N06VLG

 Preliminary Data Sheet NP90N04VDK R07DS1017EJ0100 40 V – 90 A – N-channel Power MOS FET Rev.1.00 Application: Automotive Feb 21, 2013 Description The NP90N04VDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 3900 pF

4.8. np90n055vdg.pdf Size:329K _update-mosfet

NP90N06VLG
NP90N06VLG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.9. np90n055vuk.pdf Size:102K _update-mosfet

NP90N06VLG
NP90N06VLG

 Preliminary Data Sheet NP90N055VUK R07DS0578EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Nov 29, 2011 Description The NP90N055VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 3.85 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V)  Designed for a

4.10. np90n04puf.pdf Size:265K _update-mosfet

NP90N06VLG
NP90N06VLG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.11. np90n04vuk.pdf Size:102K _update-mosfet

NP90N06VLG
NP90N06VLG

 Preliminary Data Sheet NP90N04VUK R07DS0577EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Nov 29, 2011 Description The NP90N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V)  Designed for auto

4.12. np90n04muk np90n04nuk.pdf Size:103K _update-mosfet

NP90N06VLG
NP90N06VLG

 Preliminary Data Sheet NP90N04MUK, NP90N04NUK R07DS0601EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 4700 pF TYP. (VDS = 25 V)  Des

4.13. np90n04vdg.pdf Size:315K _update-mosfet

NP90N06VLG
NP90N06VLG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.14. np90n04muh np90n04nuh np90n04puh.pdf Size:353K _update-mosfet

NP90N06VLG
NP90N06VLG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.15. np90n03vlg.pdf Size:229K _update-mosfet

NP90N06VLG
NP90N06VLG

 Preliminary Data Sheet R07DS0129EJ0100 NP90N03VLG Rev.1.00 Sep 24, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP90N03VLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on)1 = 3.2 mΩ MAX. (VGS = 10 V, ID = 45 A) ⎯ RDS(on)2 = 8.0 mΩ MAX. (VGS = 4.5 V, ID = 35 A) • Low input c

4.16. np90n055muk np90n055nuk.pdf Size:103K _update-mosfet

NP90N06VLG
NP90N06VLG

 Preliminary Data Sheet NP90N055MUK, NP90N055NUK R07DS0602EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 3.8 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V)  D

4.17. np90n055vug.pdf Size:325K _update-mosfet

NP90N06VLG
NP90N06VLG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.18. np90n055mdh np90n055ndh np90n055pdh.pdf Size:358K _update-mosfet

NP90N06VLG
NP90N06VLG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.19. np90n03vhg.pdf Size:219K _update-mosfet

NP90N06VLG
NP90N06VLG

 Preliminary Data Sheet R07DS0128EJ0100 NP90N03VHG Rev.1.00 Sep 24, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP90N03VHG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 3.2 mΩ MAX. (VGS = 10 V, ID = 45 A) • Low input capacitance ⎯ Ciss = 5000 pF TYP. (VDS = 25 V, VGS =

4.20. np90n04mdh np90n04ndh np90n04pdh.pdf Size:355K _update-mosfet

NP90N06VLG
NP90N06VLG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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