All MOSFET. NTHL082N65S3F Datasheet

 

NTHL082N65S3F Datasheet and Replacement


   Type Designator: NTHL082N65S3F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 313 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.082 Ohm
   Package: TO247
 

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NTHL082N65S3F Datasheet (PDF)

 ..1. Size:848K  onsemi
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NTHL082N65S3F

www.onsemi.comNTHL082N65S3FN-Channel SuperFET III FRFET MOSFET 650 V, 40 A, 82 mFeatures Description 700 V @ TJ = 150 oC SuperFET III MOSFET is ON Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 70 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 81 nC)

 8.1. Size:363K  onsemi
nthl080n120sc1.pdf pdf_icon

NTHL082N65S3F

MOSFET - SiC Power, SingleN-Channel1200 V, 80 mW, 31 ANTHL080N120SC1Features Typ. RDS(on) = 80 mWwww.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 56 nC) Low Effective Output Capacitance (typ. Coss = 80 pF) 100% UIL Tested V(BR)DSS RDS(on) MAX ID MAX These Devices are RoHS Compliant1200 V 110 mW @ 20 V 31 ATypical Applications UPSN-CHANNEL MOSFET

 8.2. Size:286K  onsemi
nthl080n120sc1a.pdf pdf_icon

NTHL082N65S3F

MOSFET - SiC Power, SingleN-Channel1200 V, 80 mW, 31 ANTHL080N120SC1AFeatures Typ. RDS(on) = 80 mWwww.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 56 nC) Low Effective Output Capacitance (typ. Coss = 80 pF) 100% UIL Tested V(BR)DSS RDS(on) MAX ID MAX These Devices are RoHS Compliant1200 V 110 mW @ 20 V 31 ATypical Applications UPSN-CHANNEL MOSFE

 9.1. Size:445K  onsemi
nthl095n65s3hf.pdf pdf_icon

NTHL082N65S3F

NTHL095N65S3HFMOSFET Power,NChannel, SUPERFET III,FRFETwww.onsemi.com650 V, 36 A, 95 mWDescriptionVDSS RDS(ON) MAX ID MAXSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing charge650 V 95 mW @ 10 V 36 Abalance technology for outstanding low on-resistance and lower gatecharge performance. This advanc

Datasheet: NP90N055NUK , NP90N055PDH , NP90N055PUH , NP90N055VDG , NP90N055VUG , NP90N055VUK , NP90N06VLG , NSVJ3557SA3 , IRLB4132 , SWI069R10VS , SWD069R10VS , SWP069R10VS , IPP050N06NG , IPI05CNE8NG , IPP054NE8NG , IPI06CN10NG , IPI08CNE8NG .

History: STH170N8F7-2 | FCPF36N60NT | IPP60R280CFD7 | SST65R360S2 | CS540A4 | MT7N65 | WMO07N65C2

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