NTHL082N65S3F Datasheet and Replacement
Type Designator: NTHL082N65S3F
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 313
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id| ⓘ - Maximum Drain Current: 40
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 27
nS
Cossⓘ -
Output Capacitance: 70
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.082
Ohm
Package:
TO247
NTHL082N65S3F substitution
-
MOSFET ⓘ Cross-Reference Search
NTHL082N65S3F Datasheet (PDF)
..1. Size:848K onsemi
nthl082n65s3f.pdf 
www.onsemi.comNTHL082N65S3FN-Channel SuperFET III FRFET MOSFET 650 V, 40 A, 82 mFeatures Description 700 V @ TJ = 150 oC SuperFET III MOSFET is ON Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 70 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 81 nC)
8.1. Size:363K onsemi
nthl080n120sc1.pdf 
MOSFET - SiC Power, SingleN-Channel1200 V, 80 mW, 31 ANTHL080N120SC1Features Typ. RDS(on) = 80 mWwww.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 56 nC) Low Effective Output Capacitance (typ. Coss = 80 pF) 100% UIL Tested V(BR)DSS RDS(on) MAX ID MAX These Devices are RoHS Compliant1200 V 110 mW @ 20 V 31 ATypical Applications UPSN-CHANNEL MOSFET
8.2. Size:286K onsemi
nthl080n120sc1a.pdf 
MOSFET - SiC Power, SingleN-Channel1200 V, 80 mW, 31 ANTHL080N120SC1AFeatures Typ. RDS(on) = 80 mWwww.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 56 nC) Low Effective Output Capacitance (typ. Coss = 80 pF) 100% UIL Tested V(BR)DSS RDS(on) MAX ID MAX These Devices are RoHS Compliant1200 V 110 mW @ 20 V 31 ATypical Applications UPSN-CHANNEL MOSFE
9.1. Size:445K onsemi
nthl095n65s3hf.pdf 
NTHL095N65S3HFMOSFET Power,NChannel, SUPERFET III,FRFETwww.onsemi.com650 V, 36 A, 95 mWDescriptionVDSS RDS(ON) MAX ID MAXSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing charge650 V 95 mW @ 10 V 36 Abalance technology for outstanding low on-resistance and lower gatecharge performance. This advanc
9.2. Size:448K onsemi
nthl033n65s3hf.pdf 
NTHL033N65S3HFMOSFET Power,NChannel, SUPERFET III,FRFETwww.onsemi.com650 V, 70 A, 33 mWDescriptionVDSS RDS(ON) MAX ID MAXSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing charge650 V 33 mW @ 10 V 70 Abalance technology for outstanding low on-resistance and lower gatecharge performance. This advanc
9.3. Size:448K onsemi
nthl050n65s3hf.pdf 
NTHL050N65S3HFMOSFET Power,NChannel, SUPERFET III,FRFETwww.onsemi.com650 V, 58 A, 50 mWDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highVDSS RDS(ON) MAX ID MAXvoltage super-junction (SJ) MOSFET family that is utilizing charge650 V 50 mW 58 Abalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced tech
9.4. Size:510K onsemi
nthl040n65s3f.pdf 
NTHL040N65S3FMOSFET Power,N-Channel, SUPERFET III,FRFET650 V, 65 A, 40 mWwww.onsemi.comDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highVDSS RDS(ON) MAX ID MAXvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gate650 V 40 mW @ 10 V 65 Acharge performance. This advanced
9.5. Size:768K onsemi
nthl060n090sc1.pdf 
MOSFET - SiC Power, SingleN-Channel900 V, 60 mW, 46 ANTHL060N090SC1Features Typ. RDS(on) = 60 mW Ultra Low Gate Charge (typ. QG(tot) = 87 nC)www.onsemi.com Low Effective Output Capacitance (typ. Coss = 113 pF) 100% UIL Tested These Devices are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAXTypical Applications900 V 84 mW @ 15 V 46 A UPS DC/DC Converte
9.6. Size:312K onsemi
nthl040n120sc1.pdf 
MOSFET - SiC Power, SingleN-Channel1200 V, 40 mW, 60 ANTHL040N120SC1Features Typ. RDS(on) = 40 mWwww.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 106 nC) Low Effective Output Capacitance (typ. Coss = 140 pF)V(BR)DSS RDS(on) MAX ID MAX 100% UIL Tested These Devices are RoHS Compliant 1200 V 56 mW @ 20 V 60 ATypical Applications UPSN-CHANNEL MOSFE
9.7. Size:335K onsemi
nthl020n090sc1.pdf 
MOSFET SiC Power, SingleN-Channel, TO247-3L900 V, 20 mW, 118 ANTHL020N090SC1Featureswww.onsemi.com Typ. RDS(on) = 20 mW @ VGS = 15 V Typ. RDS(on) = 16 mW @ VGS = 18 V Ultra Low Gate Charge (QG(tot) = 196 nC)V(BR)DSS RDS(ON) MAX ID MAX Low Effective Output Capacitance (Coss = 296 pF)900 V 28 mW @ 15 V 118 A 100% UIL Tested RoHS CompliantDTypica
9.8. Size:409K onsemi
nthl027n65s3hf.pdf 
NTHL027N65S3HFPower MOSFET, N-Channel,SUPERFET) III, FRFET),650 V, 75 A, 27.4 mWDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored to minimizeVDSS RDS(ON)
9.9. Size:399K onsemi
nthl040n65s3hf.pdf 
NTHL040N65S3HFPower MOSFET, N-Channel,SUPERFET) III, FRFET),650 V, 65 A, 40 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailored to
9.10. Size:307K onsemi
nthl020n120sc1.pdf 
MOSFET - SiC Power, SingleN-ChannelNTHL020N120SC11200 V, 20 mW, 103 AFeatures Typ. RDS(on) = 20 mWwww.onsemi.com Ultra Low Gate Charge (QG(tot) = 203 nC) Capacitance (Coss = 260 pF)V(BR)DSS RDS(on) MAX ID MAX 100% UIL Tested These Devices are RoHS Compliant 1200 V 28 mW @ 20 V 103 ATypical Applications UPSN-CHANNEL MOSFET DC/DC ConverterD
9.11. Size:266K inchange semiconductor
nthl040n65s3f.pdf 
isc N-Channel MOSFET Transistor NTHL040N65S3FFEATURESWith TO-247 packagingLow R
Datasheet: NP90N055NUK
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History: STH170N8F7-2
| FCPF36N60NT
| IPP60R280CFD7
| SST65R360S2
| CS540A4
| MT7N65
| WMO07N65C2
Keywords - NTHL082N65S3F MOSFET datasheet
NTHL082N65S3F cross reference
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NTHL082N65S3F replacement