All MOSFET. SWD069R10VS Datasheet

 

SWD069R10VS Datasheet and Replacement


   Type Designator: SWD069R10VS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 158.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 51 nS
   Cossⓘ - Output Capacitance: 1590 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0089 Ohm
   Package: TO252
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SWD069R10VS Datasheet (PDF)

 ..1. Size:753K  samwin
 swi069r10vs swd069r10vs.pdf pdf_icon

SWD069R10VS

SW069R10VSN-channel Enhanced mode TO-251/TO-252 MOSFETFeaturesTO-251 TO-252BVDSS : 100V High ruggedness Low RDS(ON) (Typ 9.0m)@VGS=4.5VID : 70ALow RDS(ON) (Typ 7.1m)@VGS=10VRDS(ON) : 9.0m@VGS=4.5V Low Gate Charge (Typ 45nC) Improved dv/dt Capability 7.1m@VGS=10V 100% Avalanche Tested 11223 3 Application: Li Battery Protect Board,

 ..2. Size:784K  samwin
 swha069r10vs swi069r10vs swd069r10vs swp069r10vs swu069r10vs.pdf pdf_icon

SWD069R10VS

SW069R10VS N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220/TO-262 MOSFET Features TO-252 TO-220 TO-262 DFN5*6 TO-251 BVDSS : 100V High ruggedness Low RDS(ON) (Typ 9.0m)@VGS=4.5V ID : 70A 1 8 Low RDS(ON) (Typ 7.1m)@VGS=10V 2 7 6 3 RDS(ON) : 9.0m@VGS=4.5V Low Gate Charge (Typ 45nC) 4 5 Improved dv/dt Capability 7.1m@VGS=10V

 ..3. Size:708K  samwin
 swha069r10vs swi069r10vs swd069r10vs swp069r10vs.pdf pdf_icon

SWD069R10VS

SW069R10VS N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220 MOSFET Features DFN5*6 TO-251 TO-252 TO-220 BVDSS : 100V High ruggedness ID : 70A Low RDS(ON) (Typ 7.1m)@VGS=10V RDS(ON) : 7.1m@VGS=10V Low Gate Charge (Typ 45nC) Improved dv/dt Capability 9.0m@VGS=4.5V 1 100% Avalanche Tested G(4) 1 1 D(5,6,7,8) 2 2 2 3 3 3 A

 9.1. Size:727K  samwin
 swd065r03vlt.pdf pdf_icon

SWD069R10VS

SW065R03VLTN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 30V High ruggednessID : 70A Low RDS(ON) (Typ 6.6m)@VGS=10V Low Gate Charge (Typ 33nC)RDS(ON) : 6.6m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Motor Drives11. Gate 2.Drain 3.Source3Genera

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Keywords - SWD069R10VS MOSFET datasheet

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