All MOSFET. SWD069R10VS Datasheet

 

SWD069R10VS MOSFET. Datasheet pdf. Equivalent

Type Designator: SWD069R10VS

Marking Code: SW069R10VS

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 158.2 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.4 V

Maximum Drain Current |Id|: 70 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 45 nC

Rise Time (tr): 51 nS

Drain-Source Capacitance (Cd): 1590 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0089 Ohm

Package: TO252

SWD069R10VS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWD069R10VS Datasheet (PDF)

1.1. swha069r10vs swi069r10vs swd069r10vs swp069r10vs.pdf Size:708K _update-mosfet

SWD069R10VS
SWD069R10VS

 SW069R10VS N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220 MOSFET Features DFN5*6 TO-251 TO-252 TO-220 BVDSS : 100V  High ruggedness ID : 70A  Low RDS(ON) (Typ 7.1mΩ)@VGS=10V RDS(ON) : 7.1mΩ@VGS=10V  Low Gate Charge (Typ 45nC)  Improved dv/dt Capability 9.0mΩ@VGS=4.5V 1  100% Avalanche Tested G(4) 1 1 D(5,6,7,8) 2 2 2 3 3 3  A

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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