SWD069R10VS Datasheet. Specs and Replacement

Type Designator: SWD069R10VS  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 158.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 51 nS

Cossⓘ - Output Capacitance: 1590 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0089 Ohm

Package: TO252

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SWD069R10VS datasheet

 ..1. Size:753K  samwin
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SWD069R10VS

SW069R10VS N-channel Enhanced mode TO-251/TO-252 MOSFET Features TO-251 TO-252 BVDSS 100V High ruggedness Low RDS(ON) (Typ 9.0m )@VGS=4.5V ID 70A Low RDS(ON) (Typ 7.1m )@VGS=10V RDS(ON) 9.0m @VGS=4.5V Low Gate Charge (Typ 45nC) Improved dv/dt Capability 7.1m @VGS=10V 100% Avalanche Tested 1 1 2 2 3 3 Application Li Battery Protect Board,... See More ⇒

 ..2. Size:784K  samwin
 swha069r10vs swi069r10vs swd069r10vs swp069r10vs swu069r10vs.pdf pdf_icon

SWD069R10VS

SW069R10VS N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220/TO-262 MOSFET Features TO-252 TO-220 TO-262 DFN5*6 TO-251 BVDSS 100V High ruggedness Low RDS(ON) (Typ 9.0m )@VGS=4.5V ID 70A 1 8 Low RDS(ON) (Typ 7.1m )@VGS=10V 2 7 6 3 RDS(ON) 9.0m @VGS=4.5V Low Gate Charge (Typ 45nC) 4 5 Improved dv/dt Capability 7.1m @VGS=10V ... See More ⇒

 ..3. Size:708K  samwin
 swha069r10vs swi069r10vs swd069r10vs swp069r10vs.pdf pdf_icon

SWD069R10VS

SW069R10VS N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220 MOSFET Features DFN5*6 TO-251 TO-252 TO-220 BVDSS 100V High ruggedness ID 70A Low RDS(ON) (Typ 7.1m )@VGS=10V RDS(ON) 7.1m @VGS=10V Low Gate Charge (Typ 45nC) Improved dv/dt Capability 9.0m @VGS=4.5V 1 100% Avalanche Tested G(4) 1 1 D(5,6,7,8) 2 2 2 3 3 3 A... See More ⇒

 9.1. Size:727K  samwin
 swd065r03vlt.pdf pdf_icon

SWD069R10VS

SW065R03VLT N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS 30V High ruggedness ID 70A Low RDS(ON) (Typ 6.6m )@VGS=10V Low Gate Charge (Typ 33nC) RDS(ON) 6.6m Improved dv/dt Capability 100% Avalanche Tested 2 1 Application Synchronous Rectification, 2 3 Li Battery Protect Board, Motor Drives 1 1. Gate 2.Drain 3.Source 3 Genera... See More ⇒

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Detailed specifications: NP90N055PUH, NP90N055VDG, NP90N055VUG, NP90N055VUK, NP90N06VLG, NSVJ3557SA3, NTHL082N65S3F, SWI069R10VS, AON7506, SWP069R10VS, IPP050N06NG, IPI05CNE8NG, IPP054NE8NG, IPI06CN10NG, IPI08CNE8NG, IPP08CNE8NG, IPD12CNE8NG

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