All MOSFET. IPI12CNE8NG Datasheet

 

IPI12CNE8NG MOSFET. Datasheet pdf. Equivalent

Type Designator: IPI12CNE8NG

Marking Code: 12CNE8N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 85 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 67 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 48 nC

Rise Time (tr): 21 nS

Drain-Source Capacitance (Cd): 608 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0126 Ohm

Package: TO262

IPI12CNE8NG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPI12CNE8NG Datasheet (PDF)

1.1. ipb12cne8n-g ipd12cne8n-g ipi12cne8n-g ipp12cne8n-g.pdf Size:549K _update-mosfet

IPI12CNE8NG IPI12CNE8NG

IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G OptiMOS®2 Power-Transistor Product Summary Features V 85 V DS • N-channel, normal level R (TO252) 12.4 mΩ DS(on),max • Excellent gate charge x R product (FOM) DS(on) I 67 A D • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1

1.2. ipb12cne8n-g ipd12cne8n-g ipi12cne8n-g ipp12cne8n-g.pdf Size:549K _infineon

IPI12CNE8NG IPI12CNE8NG

IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G OptiMOS®2 Power-Transistor Product Summary Features V 85 V DS • N-channel, normal level R (TO252) 12.4 mΩ DS(on),max • Excellent gate charge x R product (FOM) DS(on) I 67 A D • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1

 3.1. ipb12cn10n-g ipd12cn10n-g ipi12cn10n-g ipp12cn10n-g.pdf Size:623K _update-mosfet

IPI12CNE8NG IPI12CNE8NG

IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS®2 Power-Transistor Product Summary Features V 100 V DS • N-channel, normal level R (TO252) 12.4 mΩ DS(on),max • Excellent gate charge x R product (FOM) DS(on) I 67 A D • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC

3.2. ipb12cn10n-g ipd12cn10n-g ipi12cn10n-g ipp12cn10n-g.pdf Size:623K _infineon

IPI12CNE8NG IPI12CNE8NG

IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS®2 Power-Transistor Product Summary Features V 100 V DS • N-channel, normal level R (TO252) 12.4 mΩ DS(on),max • Excellent gate charge x R product (FOM) DS(on) I 67 A D • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC

 3.3. ipb12cn10ng ipi12cn10ng.pdf Size:858K _infineon

IPI12CNE8NG IPI12CNE8NG

IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS™2 Power-Transistor Product Summary Features VDS 100 V • N-channel, normal level RDS(on),max (TO252) 12.4 mW • Excellent gate charge x R product (FOM) DS(on) ID 67 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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