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IPI12CNE8NG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IPI12CNE8NG

Маркировка: 12CNE8N

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 125 W

Предельно допустимое напряжение сток-исток (Uds): 85 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 4 V

Максимально допустимый постоянный ток стока (Id): 67 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 48 nC

Время нарастания (tr): 21 ns

Выходная емкость (Cd): 608 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.0126 Ohm

Тип корпуса: TO262

Аналог (замена) для IPI12CNE8NG

 

 

IPI12CNE8NG Datasheet (PDF)

1.1. ipb12cne8n-g ipd12cne8n-g ipi12cne8n-g ipp12cne8n-g.pdf Size:549K _update-mosfet

IPI12CNE8NG
IPI12CNE8NG

IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G OptiMOS®2 Power-Transistor Product Summary Features V 85 V DS • N-channel, normal level R (TO252) 12.4 mΩ DS(on),max • Excellent gate charge x R product (FOM) DS(on) I 67 A D • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1

1.2. ipb12cne8n-g ipd12cne8n-g ipi12cne8n-g ipp12cne8n-g.pdf Size:549K _infineon

IPI12CNE8NG
IPI12CNE8NG

IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G OptiMOS®2 Power-Transistor Product Summary Features V 85 V DS • N-channel, normal level R (TO252) 12.4 mΩ DS(on),max • Excellent gate charge x R product (FOM) DS(on) I 67 A D • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1

 3.1. ipb12cn10n-g ipd12cn10n-g ipi12cn10n-g ipp12cn10n-g.pdf Size:623K _update-mosfet

IPI12CNE8NG
IPI12CNE8NG

IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS®2 Power-Transistor Product Summary Features V 100 V DS • N-channel, normal level R (TO252) 12.4 mΩ DS(on),max • Excellent gate charge x R product (FOM) DS(on) I 67 A D • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC

3.2. ipb12cn10n-g ipd12cn10n-g ipi12cn10n-g ipp12cn10n-g.pdf Size:623K _infineon

IPI12CNE8NG
IPI12CNE8NG

IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS®2 Power-Transistor Product Summary Features V 100 V DS • N-channel, normal level R (TO252) 12.4 mΩ DS(on),max • Excellent gate charge x R product (FOM) DS(on) I 67 A D • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC

 3.3. ipb12cn10ng ipi12cn10ng.pdf Size:858K _infineon

IPI12CNE8NG
IPI12CNE8NG

IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS™2 Power-Transistor Product Summary Features VDS 100 V • N-channel, normal level RDS(on),max (TO252) 12.4 mW • Excellent gate charge x R product (FOM) DS(on) ID 67 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1)

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