IPI12CNE8NG - описание и поиск аналогов

 

IPI12CNE8NG. Аналоги и основные параметры

Наименование производителя: IPI12CNE8NG

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 125 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 85 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 67 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 21 ns

Cossⓘ - Выходная емкость: 608 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0126 Ohm

Тип корпуса: TO262

Аналог (замена) для IPI12CNE8NG

- подборⓘ MOSFET транзистора по параметрам

 

IPI12CNE8NG даташит

 4.1. Size:549K  infineon
ipb12cne8n-g ipd12cne8n-g ipi12cne8n-g ipp12cne8n-g.pdfpdf_icon

IPI12CNE8NG

IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G OptiMOS 2 Power-Transistor Product Summary Features V 85 V DS N-channel, normal level R (TO252) 12.4 m DS(on),max Excellent gate charge x R product (FOM) DS(on) I 67 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1

 7.1. Size:858K  infineon
ipb12cn10ng ipd12cn10ng ipi12cn10ng ipp12cn10ng ipb12cn10ng ipi12cn10ng.pdfpdf_icon

IPI12CNE8NG

IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS 2 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max (TO252) 12.4 mW Excellent gate charge x R product (FOM) DS(on) ID 67 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)

 7.2. Size:623K  infineon
ipb12cn10n-g ipd12cn10n-g ipi12cn10n-g ipp12cn10n-g.pdfpdf_icon

IPI12CNE8NG

IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R (TO252) 12.4 m DS(on),max Excellent gate charge x R product (FOM) DS(on) I 67 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC

 7.3. Size:256K  inchange semiconductor
ipi12cn10ng.pdfpdf_icon

IPI12CNE8NG

Isc N-Channel MOSFET Transistor IPI12CN10NG FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage

Другие MOSFET... SWP069R10VS , IPP050N06NG , IPI05CNE8NG , IPP054NE8NG , IPI06CN10NG , IPI08CNE8NG , IPP08CNE8NG , IPD12CNE8NG , 2SK3568 , IPP12CNE8NG , IPI45N04S4L-08 , IPP45N04S4L-08 , TP2301PR , TP2302NR , TP2305PR , TP3443PR , TP4812NR .

History: IRC530PBF | STU411D | TK6A60W | SK840319 | CJQ6601

 

 

 

 

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