Справочник MOSFET. IPI12CNE8NG

 

IPI12CNE8NG Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: IPI12CNE8NG
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 67 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 21 ns
   Cossⓘ - Выходная емкость: 608 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0126 Ohm
   Тип корпуса: TO262
 

 Аналог (замена) для IPI12CNE8NG

   - подбор ⓘ MOSFET транзистора по параметрам

 

IPI12CNE8NG Datasheet (PDF)

 4.1. Size:549K  infineon
ipb12cne8n-g ipd12cne8n-g ipi12cne8n-g ipp12cne8n-g.pdfpdf_icon

IPI12CNE8NG

IPB12CNE8N G IPD12CNE8N GIPI12CNE8N G IPP12CNE8N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 85 VDS N-channel, normal levelR (TO252) 12.4mDS(on),max Excellent gate charge x R product (FOM)DS(on)I 67 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1

 7.1. Size:858K  infineon
ipb12cn10ng ipd12cn10ng ipi12cn10ng ipp12cn10ng ipb12cn10ng ipi12cn10ng.pdfpdf_icon

IPI12CNE8NG

IPB12CN10N G IPD12CN10N GIPI12CN10N G IPP12CN10N GOptiMOS2 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO252) 12.4 mW Excellent gate charge x R product (FOM)DS(on)ID 67 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)

 7.2. Size:623K  infineon
ipb12cn10n-g ipd12cn10n-g ipi12cn10n-g ipp12cn10n-g.pdfpdf_icon

IPI12CNE8NG

IPB12CN10N G IPD12CN10N GIPI12CN10N G IPP12CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR (TO252) 12.4mDS(on),max Excellent gate charge x R product (FOM)DS(on)I 67 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC

 7.3. Size:256K  inchange semiconductor
ipi12cn10ng.pdfpdf_icon

IPI12CNE8NG

Isc N-Channel MOSFET Transistor IPI12CN10NGFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

Другие MOSFET... SWP069R10VS , IPP050N06NG , IPI05CNE8NG , IPP054NE8NG , IPI06CN10NG , IPI08CNE8NG , IPP08CNE8NG , IPD12CNE8NG , 5N65 , IPP12CNE8NG , IPI45N04S4L-08 , IPP45N04S4L-08 , TP2301PR , TP2302NR , TP2305PR , TP3443PR , TP4812NR .

History: SSFT3906 | NTD20P06LT4G | RFP6P08 | SIF160N040 | IRF7450PBF | SE10015 | IRLS3036-7P

 

 
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