TP3443PR Specs and Replacement
Type Designator: TP3443PR
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: SOT23
TP3443PR substitution
- MOSFET ⓘ Cross-Reference Search
TP3443PR datasheet
tp3443pr.pdf
TP3443PR P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR FEATURES ADVANCED TRENCH PROCESS TECHNOLOGY HIGH DENSITY CELL DESIGN FOR ULTRA LOW ON-RESISTANCE FULLY CHARACTERIZED AVALANCHE VOLTAGE AND CURRENT IMPROVED SHOOT-THROUGH FOM BOTH NORMAL AND PB FREE PRODUCT ARE AVAILABLE NORMAL 80 95% SN, 5 20% PB PB FREE 99% SN ABOVE PLASTIC MATERIA... See More ⇒
Detailed specifications: IPD12CNE8NG, IPI12CNE8NG, IPP12CNE8NG, IPI45N04S4L-08, IPP45N04S4L-08, TP2301PR, TP2302NR, TP2305PR, 20N50, TP4812NR, TP9435PR, 4N60CB, AON6786, AON6790, AP9918H, AP9918J, CEB7030L
Keywords - TP3443PR MOSFET specs
TP3443PR cross reference
TP3443PR equivalent finder
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TP3443PR substitution
TP3443PR replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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