4N60CB PDF and Equivalents Search

 ..1. Size:224K  1
 4n60cb.pdf

UNISONIC TECHNOLOGIES CO., LTD 4N60-CB Power MOSFET 4.0A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl... See More ⇒

 0.1. Size:1019K  1
 jcs4n60vb jcs4n60rb jcs4n60bb jcs4n60cb jcs4n60fb.pdf

N R N-CHANNEL MOSFET JCS4N60B Package MAIN CHARACTERISTICS 4.0 A ID 600 V VDSS Rdson Vgs=10V 2.4 13.3nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS ... See More ⇒

 0.2. Size:1045K  jilin sino
 jcs4n60vb jcs4n60rb jcs4n60bb jcs4n60sb jcs4n60cb jcs4n60fb.pdf

N R N-CHANNEL MOSFET JCS4N60B Package MAIN CHARACTERISTICS ID 4.0 A VDSS 600 V 2.4 Rdson Vgs=10V Qg 18.1nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power su... See More ⇒

 9.1. Size:801K  1
 svf4n60caf svf4n60cak svf4n60cad svf4n60cat svf4n60camn svf4n60camj.pdf

SVF4N60CAF/K/D/T/MN/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switc... See More ⇒

 9.2. Size:345K  infineon
 spp24n60c3.pdf

SPP24N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.16 New revolutionary high voltage technology ID 24.3 A Worldwide best RDS(on) in TO 220 PG-TO220-3-1 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking SPP24N60C3 P... See More ⇒

 9.3. Size:304K  infineon
 spp04n60c3 spb04n60c3 spa04n60c3.pdf

SPP04N60C3, SPB04N60C3 Final data SPA04N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.95 New revolutionary high voltage technology ID 4.5 A Ultra low gate charge P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 Periodic avalanche rated Extreme dv/dt rated 3 High peak current capability 2 1 P-TO220-3-31 Improved transconductance P-TO... See More ⇒

 9.4. Size:744K  infineon
 spd04n60c3 spu04n60c3.pdf

VDS Tjmax G G G G ... See More ⇒

 9.5. Size:423K  infineon
 spb04n60c3.pdf

VDS Tjmax G G ... See More ⇒

 9.6. Size:678K  infineon
 spw24n60cfd.pdf

SPW24N60CFD TM C IMOSTM "9@/; %;+877+;B Features V 1?B6M 650 V !0 V &CIG>CH>8 ;6HI G 8DK GN 7D9N 9>D9 R 0.185 DS(on) max V "MIG B AN ADL G K GH G 8DK GN 8=6G;> 9 688DG9>CC... See More ⇒

 9.7. Size:807K  infineon
 spw24n60c3.pdf

SPW24N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.16 New revolutionary high voltage technology ID 24.3 A Ultra low gate charge PG-TO247 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking SPW24N60C3 PG-TO247 Q67040-S4640 24N60C3 Maximum Rati... See More ⇒

 9.8. Size:539K  infineon
 spp24n60cfd.pdf

SPP24N60CFD CoolMOSTM Power Transistor Product Summary Features V @ Tjmax 650 V DS Intrinsic fast-recovery body diode R 0.185 DS(on),max Extremely low reverse recovery charge I 21.7 A D Ultra low gate charge PG-TO220 Extreme dv /dt rated High peak current capability Qualified for industrial grade applications according to JEDEC1) CoolMOS CFD designed... See More ⇒

 9.9. Size:620K  infineon
 sps04n60c3.pdf

S VDS Tjmax G -3-11 Marking S G 1-3-11 ... See More ⇒

 9.10. Size:588K  infineon
 spp04n60c3 spa04n60c3.pdf

VDS Tjmax G FP G 3 2 1 P-TO220-3-31 G ;-3-111 ... See More ⇒

 9.11. Size:101K  ixys
 ixgh24n60cd1.pdf

IXGH 24N60CD1 VCES = 600 V HiPerFASTTM IGBT IXGT 24N60CD1 IC25 = 48 A with Diode VCE(sat) = 2.5 V Lightspeed Series Preliminary data TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C48 A TO-247 AD (IXGH) IC110 TC = 110 C24 A ... See More ⇒

 9.12. Size:98K  ixys
 ixgp24n60c.pdf

HiPerFASTTM IGBT IXGA 24N60C VCES = 600 V IXGP 24N60C IC25 = 48 A LightspeedTM Series VCE(sat)typ = 2.1 V tfi typ = 60 ns Symbol Test Conditions Maximum Ratings TO-220 AB (IXGP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C48 A IC110 TC = 110 C24 A TO-263 AA (IXGA) ICM TC... See More ⇒

 9.13. Size:92K  ixys
 ixgp24n60c4.pdf

Advance Technical Information High-Gain IGBTs VCES = 600V IXGP24N60C4 IC110 = 24A IXGH24N60C4 VCE(sat) 2.70V tfi(typ) = 68ns High-Speed PT Trench IGBTs TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G C Tab VCGR TJ = 25 C to 150 C, RGE = 1M 600 V E VGES Continuous 20 V VGEM Transient 30 V TO-247 AD (IX... See More ⇒

 9.14. Size:233K  ixys
 ixgh24n60c4d1.pdf

VCES = 600V High-Gain IGBT IXGH24N60C4D1 IC110 = 24A w/ Diode VCE(sat) 2.70V tfi(typ) = 68ns High-Speed PT Trench IGBT TO-247 AD Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 600 V C Tab E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G = Gate C = Collector VGEM Transient 30 V E = Emitter ... See More ⇒

 9.15. Size:52K  ixys
 ixgt24n60c.pdf

IXGH 24N60C VCES = 600 V HiPerFASTTM IGBT IXGT 24N60C IC25 = 48 A LightspeedTM Series VCE(sat)typ = 2.1 V tfi typ = 60 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V C (TAB) E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C48 A TO-247 AD (IXGH) IC110 TC = 110 ... See More ⇒

 9.16. Size:92K  ixys
 ixgh24n60c4.pdf

Advance Technical Information High-Gain IGBTs VCES = 600V IXGP24N60C4 IC110 = 24A IXGH24N60C4 VCE(sat) 2.70V tfi(typ) = 68ns High-Speed PT Trench IGBTs TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G C Tab VCGR TJ = 25 C to 150 C, RGE = 1M 600 V E VGES Continuous 20 V VGEM Transient 30 V TO-247 AD (IX... See More ⇒

 9.17. Size:98K  ixys
 ixga24n60c.pdf

HiPerFASTTM IGBT IXGA 24N60C VCES = 600 V IXGP 24N60C IC25 = 48 A LightspeedTM Series VCE(sat)typ = 2.1 V tfi typ = 60 ns Symbol Test Conditions Maximum Ratings TO-220 AB (IXGP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C48 A IC110 TC = 110 C24 A TO-263 AA (IXGA) ICM TC... See More ⇒

 9.18. Size:54K  ixys
 ixgr24n60c.pdf

VCES = 600 V IXGR 24N60C HiPerFASTTM IGBT IC25 = 42 A ISOPLUS247TM VCE(sat) = 2.5 V (Electrically Isolated Back Surface) tfi(typ) = 60 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V G C E Isolated Backside* IC25 TC = ... See More ⇒

 9.19. Size:100K  ixys
 ixga24n60c ixgp24n60c.pdf

HiPerFASTTM IGBT IXGA 24N60C VCES = 600 V IXGP 24N60C IC25 = 48 A LightspeedTM Series VCE(sat)typ = 2.1 V tfi typ = 60 ns Symbol Test Conditions Maximum Ratings TO-220 AB (IXGP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C48 A IC110 TC = 110 C24 A TO-263 AA (IXGA) ICM TC... See More ⇒

 9.20. Size:52K  ixys
 ixgh24n60c.pdf

IXGH 24N60C VCES = 600 V HiPerFASTTM IGBT IXGT 24N60C IC25 = 48 A LightspeedTM Series VCE(sat)typ = 2.1 V tfi typ = 60 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V C (TAB) E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C48 A TO-247 AD (IXGH) IC110 TC = 110 ... See More ⇒

 9.21. Size:84K  ixys
 ixgp24n60c4d1.pdf

Preliminary Technical Information VCES = 600V High-Gain IGBT IXGP24N60C4D1 IC110 = 24A w/ Diode VCE(sat) 2.70V tfi(typ) = 44ns High-Speed PT Trench IGBT TO-220 Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 600 V C Tab E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G = Gate C = Collector... See More ⇒

 9.22. Size:101K  ixys
 ixgt24n60cd1.pdf

IXGH 24N60CD1 VCES = 600 V HiPerFASTTM IGBT IXGT 24N60CD1 IC25 = 48 A with Diode VCE(sat) = 2.5 V Lightspeed Series Preliminary data TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C48 A TO-247 AD (IXGH) IC110 TC = 110 C24 A ... See More ⇒

 9.23. Size:128K  ixys
 ixga24n60c4.pdf

Advance Technical Information High-Gain IGBTs VCES = 600V IXGA24N60C4 IC110 = 24A IXGP24N60C4 VCE(sat) 2.70V IXGH24N60C4 tfi(typ) = 68ns High-Speed PT Trench IGBTs TO-263 (IXGA) G E C (Tab) TO-220 (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G C C (... See More ⇒

 9.24. Size:477K  taiwansemi
 tsm4n60ch tsm4n60ci tsm4n60cp tsm4n60cz.pdf

TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 TO-252 Pin Definition PRODUCT SUMMARY (IPAK) (DPAK) 1. Gate 2. Drain VDS (V) RDS(on)( ) ID (A) 3. Source 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a... See More ⇒

 9.25. Size:379K  sisemi
 sif4n60c.pdf

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF4N60C N- MOS / N-CHANNEL POWER MOSFET SIF4N60C N- MOS / N-CHANN... See More ⇒

 9.26. Size:382K  sisemi
 sif4n60c 1.pdf

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF4N60C N- MOS / N-CHANNEL POWER MOSFET SIF4N60C N- MOS / N-CHANN... See More ⇒

 9.27. Size:1304K  jilin sino
 jcs4n60v jcs4n60c jcs4n60f jcs4n60r jcs4n60b.pdf

... See More ⇒

 9.28. Size:255K  inpower semi
 ftp04n60c fta04n60c.pdf

FTP04N60C FTA04N60C N-Channel MOSFET Pb Lead Free Package and Finish Applications VDSS RDS(ON) (Max.) ID Adaptor Charger 600 V 2.2 4.0 A SMPS Standby Power Features D RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves G G G Ordering Information DS DS TO-220F TO-220 S PART ... See More ⇒

 9.29. Size:144K  jdsemi
 cm4n60c.pdf

R CM4N60C www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS ... See More ⇒

 9.30. Size:144K  jdsemi
 cm4n60c to251.pdf

R CM4N60C www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS ... See More ⇒

 9.31. Size:321K  silan
 svfp14n60cfjd.pdf

... See More ⇒

 9.32. Size:473K  silan
 svf4n60caf svf4n60cak svf4n60cat svf4n60cadtr svf4n60camn svf4n60camj.pdf

... See More ⇒

 9.33. Size:900K  silan
 svf4n60caf svf4n60cak svf4n60cad svf4n60cat svf4n60camn svf4n60camj.pdf

SVF4N60CAF/K/D/T/MN/MJ 4A 600V N SVF4N60CAF/K/D/T/MN/MJ N MOS F-CellTM VDMOS ... See More ⇒

 9.34. Size:318K  silan
 svfp14n60cfj.pdf

SVFP14N60CFJ 14A 600V N 2 SVFP14N60CFJ N MOS F-CellTM VDMOS 1 3 1. 2. ... See More ⇒

 9.35. Size:323K  silan
 svf4n60cafj.pdf

SVF4N60CAFJ 4A 600V N 2 SVF4N60CAFJ N MOS 1 F-CellTM VDMOS 3 1. 2. ... See More ⇒

 9.36. Size:422K  silan
 svfp4n60camj svfp4n60cadtr.pdf

SVFP4N60CAMJ/D 4A 600V N 2 SVFP4N60CAMJ/D N MOS F-CellTM VDMOS 1 3 ... See More ⇒

 9.37. Size:561K  bruckewell
 ms4n60c.pdf

HV MOSFET DIE SPECIFICATION Product Name BW-MS4N60C Chip Features Front side Back side Chip Size (um) Thickness (um) Pad Size-Gate (um) Pad Size-Source (um) 3,180 * 2,720 350 420 * 520 900 * 1900 Referenced PKG Electrical Ratings TC = 25 Cunless otherwise noted Absolute Maximum Ratings Symbol Parameter Value Units VDSS Drain to Source Voltage 600 V VGS Gate to Source Vol... See More ⇒

 9.38. Size:670K  way-on
 wml14n60c4 wmk14n60c4 wmm14n60c4 wmn14n60c4 wmp14n60c4 wmo14n60c4.pdf

WML1 MM14N60C 14N60C4, WMK14N60C4, WM C4 WMN14N60C4, WMP14N60C4, WM C4 MO14N60C 600V n Power MOSFET V 0.33 Super Junction Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WMOSTM C4... See More ⇒

 9.39. Size:853K  cn vbsemi
 spu04n60c3.pdf

SPU04N60C3 www.VBsemi.tw N hannel 650 D S Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Requirement RoHS RDS(on) ( )VGS = 10 V 2.0 COMPLIANT Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 Compli... See More ⇒

 9.40. Size:247K  inchange semiconductor
 spp24n60c3.pdf

isc N-Channel MOSFET Transistor SPP24N60C3 ISPP24N60C3 FEATURES Static drain-source on-resistance RDS(on) 0.16 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge Ultra low effective capacitance Improved transconductance ABSO... See More ⇒

 9.41. Size:248K  inchange semiconductor
 spp04n60c3.pdf

isc N-Channel MOSFET Transistor SPP04N60C3 ISPP04N60C3 FEATURES Static drain-source on-resistance RDS(on) 0.95 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒

 9.42. Size:258K  inchange semiconductor
 spb04n60c3.pdf

Isc N-Channel MOSFET Transistor SPB04N60C3 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo... See More ⇒

 9.43. Size:208K  inchange semiconductor
 spu04n60c3.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SPU04N60C3 FEATURES With To-251(IPAK) package New revolutionary high voltage technology Ultra low gate charge High peak current capability Improved transconductance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications A... See More ⇒

 9.44. Size:244K  inchange semiconductor
 spw24n60cfd.pdf

isc N-Channel MOSFET Transistor SPW24N60CFD ISPW24N60CFD FEATURES Static drain-source on-resistance RDS(on) 185m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta... See More ⇒

 9.45. Size:244K  inchange semiconductor
 spw24n60c3.pdf

isc N-Channel MOSFET Transistor SPW24N60C3 ISPW24N60C3 FEATURES Static drain-source on-resistance RDS(on) 160m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage... See More ⇒

 9.46. Size:247K  inchange semiconductor
 spp24n60cfd.pdf

isc N-Channel MOSFET Transistor SPP24N60CFD ISPP24N60CFD FEATURES Static drain-source on-resistance RDS(on) 0.185 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒

 9.47. Size:245K  inchange semiconductor
 spd04n60c3.pdf

isc N-Channel MOSFET Transistor SPD04N60C3,ISPD04N60C3 FEATURES Static drain-source on-resistance RDS(on) 0.95 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability Improved transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE ... See More ⇒