DMT10N60
MOSFET. Datasheet pdf. Equivalent
Type Designator: DMT10N60
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 225
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 12
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 42
nC
trⓘ - Rise Time: 115
nS
Cossⓘ -
Output Capacitance: 200
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8
Ohm
Package:
TO-220
DMT10N60
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMT10N60
Datasheet (PDF)
9.1. Size:436K 1
dmt10h015lps-13.pdf 
Green DMT10H015LPS 100V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features ID Thermally Efficient Package Cooler Running Applications BVDSS RDS(ON) Max TC = +25C High Conversion Efficiency Low RDS(ON) Minimizes On-State Losses 44A 16m @ VGS = 10V Low Input Capacitance 100V Fast Switching Speed 41A 18m @ VG
9.2. Size:436K diodes
dmt10h015lps.pdf
Green DMT10H015LPS 100V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features ID Thermally Efficient Package Cooler Running Applications BVDSS RDS(ON) Max TC = +25C High Conversion Efficiency Low RDS(ON) Minimizes On-State Losses 44A 16m @ VGS = 10V Low Input Capacitance 100V Fast Switching Speed 41A 18m @ VG
9.3. Size:482K diodes
dmt10h010lk3.pdf
DMT10H010LK3 Green100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Max 100% Unclamped Inductive Switching Ensures More Reliable BVDSS RDS(ON) Max TC = +25C and Robust End Application Low RDS(ON) Minimizes Power Losses 8.8m @ VGS = 10V 68.8A Low Qg Minimizes Switching Losses Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
9.4. Size:546K diodes
dmt10h010lct.pdf
GreenDMT10H010LCT 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BV R Package DSS DS(ON) High BV Rating for Power Application DSST = +25C C Low Input/Output Leakage 100V 9.5m @V = 10V TO220AB 98A GS 100% Unclamped Inductive Switching (UIS) Test in Production Ensures More Reliable and Robust End Ap
9.5. Size:367K diodes
dmt10h010lss.pdf
DMT10H010LSS 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID MAX 100% Unclamped Inductive Switch (UIS) Test in Production BVDSS RDS(ON) Max TC = +25C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 100V 29.5A 9.5m @ VGS = 10V Low Input Capacitance Fast Switching Speed Totally Lead-Free &
9.6. Size:445K diodes
dmt10h015lss.pdf
DMT10H015LSS 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID 100% Unclamped Inductive Switch (UIS) Test in Production BVDSS RDS(ON) Max TA = +25C High Conversion Efficiency Low RDS(ON) Minimizes On-State Losses 8.3A 16m @ VGS = 10V 100V Low Input Capacitance 7.9A 18m @ VGS = 6V Fast Switching Speed Tot
9.7. Size:500K diodes
dmt10h009lcg.pdf
DMT10H009LCG 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) Test in Production ID BVDSS RDS(ON) Max TC = +25C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 8.8m @ VGS = 10V 47A Low Input Capacitance 100V Fast Switching Speed 12.9m @ VGS = 4.5V 39A
9.8. Size:261K inchange semiconductor
dmt10h010lct.pdf
isc N-Channel MOSFET Transistor DMT10H010LCTFEATURESDrain Current I = 98A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 9.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
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