Справочник MOSFET. DMT10N60

 

DMT10N60 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: DMT10N60
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 225 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 42 nC
   trⓘ - Время нарастания: 115 ns
   Cossⓘ - Выходная емкость: 200 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.8 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для DMT10N60

 

 

DMT10N60 Datasheet (PDF)

 ..1. Size:2253K  1
 dmt10n60 dmf10n60 dmk10n60 dmg10n60.pdf

DMT10N60 DMT10N60

12N60 600V N-Channel Power MOSFET RDS(ON)

 9.1. Size:436K  1
 dmt10h015lps-13.pdf

DMT10N60 DMT10N60

Green DMT10H015LPS 100V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features ID Thermally Efficient Package Cooler Running Applications BVDSS RDS(ON) Max TC = +25C High Conversion Efficiency Low RDS(ON) Minimizes On-State Losses 44A 16m @ VGS = 10V Low Input Capacitance 100V Fast Switching Speed 41A 18m @ VG

 9.2. Size:436K  diodes
 dmt10h015lps.pdf

DMT10N60 DMT10N60

Green DMT10H015LPS 100V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features ID Thermally Efficient Package Cooler Running Applications BVDSS RDS(ON) Max TC = +25C High Conversion Efficiency Low RDS(ON) Minimizes On-State Losses 44A 16m @ VGS = 10V Low Input Capacitance 100V Fast Switching Speed 41A 18m @ VG

 9.3. Size:482K  diodes
 dmt10h010lk3.pdf

DMT10N60 DMT10N60

DMT10H010LK3 Green100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Max 100% Unclamped Inductive Switching Ensures More Reliable BVDSS RDS(ON) Max TC = +25C and Robust End Application Low RDS(ON) Minimizes Power Losses 8.8m @ VGS = 10V 68.8A Low Qg Minimizes Switching Losses Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

 9.4. Size:546K  diodes
 dmt10h010lct.pdf

DMT10N60 DMT10N60

GreenDMT10H010LCT 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BV R Package DSS DS(ON) High BV Rating for Power Application DSST = +25C C Low Input/Output Leakage 100V 9.5m @V = 10V TO220AB 98A GS 100% Unclamped Inductive Switching (UIS) Test in Production Ensures More Reliable and Robust End Ap

 9.5. Size:367K  diodes
 dmt10h010lss.pdf

DMT10N60 DMT10N60

DMT10H010LSS 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID MAX 100% Unclamped Inductive Switch (UIS) Test in Production BVDSS RDS(ON) Max TC = +25C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 100V 29.5A 9.5m @ VGS = 10V Low Input Capacitance Fast Switching Speed Totally Lead-Free &

 9.6. Size:445K  diodes
 dmt10h015lss.pdf

DMT10N60 DMT10N60

DMT10H015LSS 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID 100% Unclamped Inductive Switch (UIS) Test in Production BVDSS RDS(ON) Max TA = +25C High Conversion Efficiency Low RDS(ON) Minimizes On-State Losses 8.3A 16m @ VGS = 10V 100V Low Input Capacitance 7.9A 18m @ VGS = 6V Fast Switching Speed Tot

 9.7. Size:500K  diodes
 dmt10h009lcg.pdf

DMT10N60 DMT10N60

DMT10H009LCG 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) Test in Production ID BVDSS RDS(ON) Max TC = +25C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 8.8m @ VGS = 10V 47A Low Input Capacitance 100V Fast Switching Speed 12.9m @ VGS = 4.5V 39A

 9.8. Size:261K  inchange semiconductor
 dmt10h010lct.pdf

DMT10N60 DMT10N60

isc N-Channel MOSFET Transistor DMT10H010LCTFEATURESDrain Current I = 98A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 9.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

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