DMK10N60 Specs and Replacement
Type Designator: DMK10N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 115 nS
Cossⓘ - Output Capacitance: 200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO-262
DMK10N60 substitution
- MOSFET ⓘ Cross-Reference Search
DMK10N60 datasheet
dmt10n60 dmf10n60 dmk10n60 dmg10n60.pdf
12N60 600V N-Channel Power MOSFET RDS(ON)... See More ⇒
Detailed specifications: AON6790, AP9918H, AP9918J, CEB7030L, CEP7030L, CSD30N55, DMT10N60, DMF10N60, 7N60, DMG10N60, H06N60U, JCS4N60VB, JCS4N60RB, JCS4N60BB, JCS4N60CB, JCS4N60FB, LD1014D
Keywords - DMK10N60 MOSFET specs
DMK10N60 cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: AP9918J | CEK01N65 | DMK4N65
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