H06N60U Datasheet and Replacement
Type Designator: H06N60U
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 158 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO-263
H06N60U substitution
H06N60U Datasheet (PDF)
h06n60u h06n60e h06n60f.pdf
Spec. No. : MOS200402HI-SINCERITYIssued Date : 2004.04.01Revised Date : 2005.03.10MICROELECTRONICS CORP.Page No. : 1/6H06N60 Series Pin AssignmentH06N60 SeriesTab 3-Lead Plastic TO-263N-Channel Power Field Effect TransistorPackage Code: UPin 1: GatePin 2 & Tab: Drain32Pin 3: Source1DescriptionTabThis high voltage MOSFET uses an advanced termination scheme t
h06n60.pdf
Spec. No. : MOS200402HI-SINCERITYIssued Date : 2004.04.01Revised Date : 2005.03.10MICROELECTRONICS CORP.Page No. : 1/6H06N60 Series Pin AssignmentH06N60 SeriesTab 3-Lead Plastic TO-263N-Channel Power Field Effect TransistorPackage Code: UPin 1: GatePin 2 & Tab: Drain32Pin 3: Source1DescriptionTabThis high voltage MOSFET uses an advanced termination scheme t
Datasheet: AP9918J , CEB7030L , CEP7030L , CSD30N55 , DMT10N60 , DMF10N60 , DMK10N60 , DMG10N60 , STP65NF06 , JCS4N60VB , JCS4N60RB , JCS4N60BB , JCS4N60CB , JCS4N60FB , LD1014D , ME80N75F , ME80N75FG .
History: R6007JNX
Keywords - H06N60U MOSFET datasheet
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H06N60U substitution
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History: R6007JNX
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