All MOSFET. H06N60U Datasheet

 

H06N60U Datasheet and Replacement


   Type Designator: H06N60U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 35.5 nC
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 158 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO-263
 

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H06N60U Datasheet (PDF)

 ..1. Size:75K  1
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H06N60U

Spec. No. : MOS200402HI-SINCERITYIssued Date : 2004.04.01Revised Date : 2005.03.10MICROELECTRONICS CORP.Page No. : 1/6H06N60 Series Pin AssignmentH06N60 SeriesTab 3-Lead Plastic TO-263N-Channel Power Field Effect TransistorPackage Code: UPin 1: GatePin 2 & Tab: Drain32Pin 3: Source1DescriptionTabThis high voltage MOSFET uses an advanced termination scheme t

 8.1. Size:71K  hsmc
 h06n60.pdf pdf_icon

H06N60U

Spec. No. : MOS200402HI-SINCERITYIssued Date : 2004.04.01Revised Date : 2005.03.10MICROELECTRONICS CORP.Page No. : 1/6H06N60 Series Pin AssignmentH06N60 SeriesTab 3-Lead Plastic TO-263N-Channel Power Field Effect TransistorPackage Code: UPin 1: GatePin 2 & Tab: Drain32Pin 3: Source1DescriptionTabThis high voltage MOSFET uses an advanced termination scheme t

Datasheet: AP9918J , CEB7030L , CEP7030L , CSD30N55 , DMT10N60 , DMF10N60 , DMK10N60 , DMG10N60 , STP65NF06 , JCS4N60VB , JCS4N60RB , JCS4N60BB , JCS4N60CB , JCS4N60FB , LD1014D , ME80N75F , ME80N75FG .

History: JFAM20N65C

Keywords - H06N60U MOSFET datasheet

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