H06N60U PDF and Equivalents Search

 

H06N60U Specs and Replacement

Type Designator: H06N60U

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 158 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO-263

H06N60U substitution

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H06N60U datasheet

 ..1. Size:75K  1
 h06n60u h06n60e h06n60f.pdf pdf_icon

H06N60U

Spec. No. MOS200402 HI-SINCERITY Issued Date 2004.04.01 Revised Date 2005.03.10 MICROELECTRONICS CORP. Page No. 1/6 H06N60 Series Pin Assignment H06N60 Series Tab 3-Lead Plastic TO-263 N-Channel Power Field Effect Transistor Package Code U Pin 1 Gate Pin 2 & Tab Drain 3 2 Pin 3 Source 1 Description Tab This high voltage MOSFET uses an advanced termination scheme t... See More ⇒

 8.1. Size:71K  hsmc
 h06n60.pdf pdf_icon

H06N60U

Spec. No. MOS200402 HI-SINCERITY Issued Date 2004.04.01 Revised Date 2005.03.10 MICROELECTRONICS CORP. Page No. 1/6 H06N60 Series Pin Assignment H06N60 Series Tab 3-Lead Plastic TO-263 N-Channel Power Field Effect Transistor Package Code U Pin 1 Gate Pin 2 & Tab Drain 3 2 Pin 3 Source 1 Description Tab This high voltage MOSFET uses an advanced termination scheme t... See More ⇒

Detailed specifications: AP9918J, CEB7030L, CEP7030L, CSD30N55, DMT10N60, DMF10N60, DMK10N60, DMG10N60, IRFZ46N, JCS4N60VB, JCS4N60RB, JCS4N60BB, JCS4N60CB, JCS4N60FB, LD1014D, ME80N75F, ME80N75FG

Keywords - H06N60U MOSFET specs

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