All MOSFET. SPB100N06S2-05 Datasheet

 

SPB100N06S2-05 Datasheet and Replacement


   Type Designator: SPB100N06S2-05
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 1330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0047 Ohm
   Package: TO263
 

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SPB100N06S2-05 Datasheet (PDF)

 ..1. Size:312K  1
spp100n06s2-05 spb100n06s2-05.pdf pdf_icon

SPB100N06S2-05

SPP100N06S2-05SPB100N06S2-05OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) max. SMD version 4.7 m Enhancement modeID 100 A 175C operating temperatureP- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP100N06S2-05 P- TO220 -3-1 Q67060-S6048PN0605SPB100N06S2-05 P- TO263 -3-2

 3.1. Size:310K  infineon
spp100n06s2l-05 spb100n06s2l-05.pdf pdf_icon

SPB100N06S2-05

SPP100N06S2L-05SPB100N06S2L-05OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) max. SMD version 4.4 m Enhancement modeID 100 A Logic LevelP- TO263 -3-2 P- TO220 -3-1 175C operating temperature Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP100N06S2L-05 P- TO220 -3-1 Q67060-S6043PN06L05SPB100N0

 6.1. Size:200K  1
spp100n08s2l-07 spb100n08s2l-07.pdf pdf_icon

SPB100N06S2-05

SPP100N08S2L-07SPB100N08S2L-07OptiMOS Power-TransistorProduct SummaryFeatureVDS75 V N-ChannelRDS(on) max. SMD version 6.5 m Enhancement modeID 100 A Logic LevelP- TO263 -3-2 P- TO220 -3-1 175C operating temperature Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP100N08S2L-07 P- TO220 -3-1 Q67060-S6045PN08L07SPB100N0

 6.2. Size:676K  infineon
spb100n03s2-03 spb100n03s2.pdf pdf_icon

SPB100N06S2-05

SPB100N03S2-03GOptiMOS TM Power-TransistorProduct SummaryFeatureVDS30 V N-ChannelRDS(on) max. SMD version 3 m Enhancement modeID 100 A Excellent Gate Charge x RDS(on) product (FOM)P-TO263 -3 Superior thermal resistance 175C operating temperature Avalanche rated dv/d t rated; Halogen Free according to IEC61249-2-21 MarkingType Package

Datasheet: ME80N75FG , MMF60R280QTH , NCE3401AY , NDF08N60ZG , NDP08N60ZG , PTF10149 , RJK0234DNS , SPP100N06S2-05 , IRFZ44N , SSM5N03FE , STK0260D , SWD5N65K , VN10KLS , BFW10 , BFW11 , CS3N20ATH , FHP3205 .

History: 4N70K | FMC12N60ES | SMK0260I | ZXMC3A16DN8 | STT8205S | JFFM12N60C | RRQ030P03TR

Keywords - SPB100N06S2-05 MOSFET datasheet

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