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CS3N20ATH Specs and Replacement

Type Designator: CS3N20ATH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 23 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: SOT-89

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CS3N20ATH datasheet

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CS3N20ATH

Silicon N-Channel Power MOSFET R CS3N20 ATH General Description VDSS 200 V CS3N20 ATH, the silicon N-channel Enhanced ID 3 A PD(TC=25 ) 2.5 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power ... See More ⇒

Detailed specifications: SPP100N06S2-05, SPB100N06S2-05, SSM5N03FE, STK0260D, SWD5N65K, VN10KLS, BFW10, BFW11, 50N06, FHP3205, FS10KM-12, FS10KM-2, FTP50N20R, JCS12N65T, JCS12N65CT, JCS12N65FT, ME4410A

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