All MOSFET. CS3N20ATH Datasheet

 

CS3N20ATH Datasheet and Replacement


   Type Designator: CS3N20ATH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 23 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: SOT-89
 

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CS3N20ATH Datasheet (PDF)

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CS3N20ATH

Silicon N-Channel Power MOSFET R CS3N20 ATH General Description VDSS 200 V CS3N20 ATH, the silicon N-channel Enhanced ID 3 A PD(TC=25) 2.5 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Datasheet: SPP100N06S2-05 , SPB100N06S2-05 , SSM5N03FE , STK0260D , SWD5N65K , VN10KLS , BFW10 , BFW11 , 50N06 , FHP3205 , FS10KM-12 , FS10KM-2 , FTP50N20R , JCS12N65T , JCS12N65CT , JCS12N65FT , ME4410A .

History: SWD15N65J | SM5A27NSFP | TMW20N65HG | SWD13N60K2 | 2SK211

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