All MOSFET. CS3N20ATH Datasheet

 

CS3N20ATH MOSFET. Datasheet pdf. Equivalent


   Type Designator: CS3N20ATH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 1.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.3 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 23 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: SOT-89

 CS3N20ATH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS3N20ATH Datasheet (PDF)

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 cs3n20ath.pdf

CS3N20ATH CS3N20ATH

Silicon N-Channel Power MOSFET R CS3N20 ATH General Description VDSS 200 V CS3N20 ATH, the silicon N-channel Enhanced ID 3 A PD(TC=25) 2.5 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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