All MOSFET. CS3N20ATH Datasheet

 

CS3N20ATH Datasheet and Replacement


   Type Designator: CS3N20ATH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 1.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 23 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: SOT-89
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CS3N20ATH Datasheet (PDF)

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CS3N20ATH

Silicon N-Channel Power MOSFET R CS3N20 ATH General Description VDSS 200 V CS3N20 ATH, the silicon N-channel Enhanced ID 3 A PD(TC=25) 2.5 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SM3023NSU | BUZ84 | IRLR024 | AON6794 | IPB50N10S3L-16 | CED05N8 | BL10N70-A

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