# NTMFS4C55N MOSFET. Datasheet pdf. Equivalent

Type Designator: NTMFS4C55N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.57 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.2 V

Maximum Drain Current |Id|: 21.7 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 14 nC

Rise Time (tr): 32 nS

Drain-Source Capacitance (Cd): 1215 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0034 Ohm

Package: SO-8

NTMFS4C55N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

## NTMFS4C55N Datasheet (PDF)

0.1. ntmfs4c55n.pdf Size:79K _1

NTMFS4C55N Power MOSFET 30 V, 78 A, Single N-Channel, SO-8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses www.onsemi.com • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 3.4 mW @ 10 V • CPU Power Delive

7.1. ntmfs4c06n.pdf Size:138K _1

NTMFS4C06N MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 69 A Features www.onsemi.com • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 4.0 mW @ 10 V Compliant 30 V 69 A 6.0 mW @ 4.5 V A

7.2. ntmfs4c01n.pdf Size:113K _onsemi

NTMFS4C01N Power MOSFET 30 V, 0.9 mW, 303 A, Single N-Channel, SO-8FL Features • Small Footprint (5x6 mm) for Compact Design http://onsemi.com • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 0.9 mW @ 10 V 30 V 303 A 1.2 mW @

7.3. ntmfs4c06n.pdf Size:93K _onsemi

NTMFS4C06N Power MOSFET 30 V, 69 A, Single N-Channel, SO-8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses www.onsemi.com • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 4.0 mW @ 10 V Applications 30 V 69 A • CPU P

7.4. ntmfs4c10n.pdf Size:88K _onsemi

NTMFS4C10N Power MOSFET 30 V, 46 A, Single N-Channel, SO-8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses www.onsemi.com • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 6.95 mW @ 10 V • CPU Power Delive

7.5. ntmfs4c08n.pdf Size:91K _onsemi

NTMFS4C08N Power MOSFET 30 V, 52 A, Single N-Channel, SO-8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses www.onsemi.com • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Applications V(BR)DSS RDS(ON) MAX ID MAX • CPU Power Delivery 5.8 mW @ 10

7.6. ntmfs4c13n.pdf Size:116K _onsemi

NTMFS4C13N Power MOSFET 30 V, 38 A, Single N-Channel, SO-8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses http://onsemi.com • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 9.1 mW @ 10 V • CPU Power Del

7.7. ntmfs4c03n.pdf Size:115K _onsemi

NTMFS4C03N Power MOSFET 30 V, 2.1 mW, 136 A, Single N-Channel, SO-8FL Features • Small Footprint (5x6 mm) for Compact Design http://onsemi.com • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 2.1 mW @ 10 V 30 V 136 A 2.8 mW @

7.8. ntmfs4c05n.pdf Size:84K _onsemi

NTMFS4C05N Power MOSFET 30 V, 78 A, Single N-Channel, SO-8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses www.onsemi.com • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 3.4 mW @ 10 V 30 V 78 A • CPU P

7.9. ntmfs4c35n.pdf Size:117K _onsemi

NTMFS4C35N Power MOSFET 30 V, 80 A, Single N-Channel, SO-8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses http://onsemi.com • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 3.2 mW @ 10 V Applications 30 V 80 A 4.0 mW

7.10. ntmfs4c09nt1g.pdf Size:93K _onsemi

NTMFS4C09N Power MOSFET 30 V, 52 A, Single N-Channel, SO-8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses www.onsemi.com • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 5.8 mW @ 10 V Applications 30 V 52 A 8.5 mW @

7.11. ntmfs4c09n.pdf Size:140K _onsemi

NTMFS4C09N MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 52 A Features www.onsemi.com • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 5.8 mW @ 10 V 30 V 52 A Compliant 8.5 mW @ 4.5 V A

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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