All MOSFET. NTMFS4C55N Datasheet

 

NTMFS4C55N MOSFET. Datasheet pdf. Equivalent

Type Designator: NTMFS4C55N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.57 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.2 V

Maximum Drain Current |Id|: 21.7 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 14 nC

Rise Time (tr): 32 nS

Drain-Source Capacitance (Cd): 1215 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0034 Ohm

Package: SO-8

NTMFS4C55N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTMFS4C55N Datasheet (PDF)

0.1. ntmfs4c55n.pdf Size:79K _1

NTMFS4C55N
NTMFS4C55N

NTMFS4C55NPower MOSFET30 V, 78 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseswww.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications3.4 mW @ 10 V CPU Power Delive

7.1. ntmfs4c06n.pdf Size:138K _1

NTMFS4C55N
NTMFS4C55N

NTMFS4C06NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 69 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS4.0 mW @ 10 VCompliant30 V 69 A6.0 mW @ 4.5 VA

7.2. ntmfs4c01n.pdf Size:113K _onsemi

NTMFS4C55N
NTMFS4C55N

NTMFS4C01NPower MOSFET30 V, 0.9 mW, 303 A, Single N-Channel,SO-8FLFeatures Small Footprint (5x6 mm) for Compact Designhttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant0.9 mW @ 10 V30 V303 A1.2 mW @

 7.3. ntmfs4c06n.pdf Size:93K _onsemi

NTMFS4C55N
NTMFS4C55N

NTMFS4C06NPower MOSFET30 V, 69 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseswww.onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant4.0 mW @ 10 VApplications30 V 69 A CPU P

7.4. ntmfs4c10n.pdf Size:88K _onsemi

NTMFS4C55N
NTMFS4C55N

NTMFS4C10NPower MOSFET30 V, 46 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses www.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications6.95 mW @ 10 V CPU Power Delive

 7.5. ntmfs4c08n.pdf Size:91K _onsemi

NTMFS4C55N
NTMFS4C55N

NTMFS4C08NPower MOSFET30 V, 52 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseswww.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantApplications V(BR)DSS RDS(ON) MAX ID MAX CPU Power Delivery5.8 mW @ 10

7.6. ntmfs4c13n.pdf Size:116K _onsemi

NTMFS4C55N
NTMFS4C55N

NTMFS4C13NPower MOSFET30 V, 38 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications9.1 mW @ 10 V CPU Power Del

7.7. ntmfs4c03n.pdf Size:115K _onsemi

NTMFS4C55N
NTMFS4C55N

NTMFS4C03NPower MOSFET30 V, 2.1 mW, 136 A, Single N-Channel,SO-8FLFeatures Small Footprint (5x6 mm) for Compact Designhttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant2.1 mW @ 10 V30 V136 A2.8 mW @

7.8. ntmfs4c05n.pdf Size:84K _onsemi

NTMFS4C55N
NTMFS4C55N

NTMFS4C05NPower MOSFET30 V, 78 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseswww.onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications3.4 mW @ 10 V30 V 78 A CPU P

7.9. ntmfs4c35n.pdf Size:117K _onsemi

NTMFS4C55N
NTMFS4C55N

NTMFS4C35NPower MOSFET30 V, 80 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant3.2 mW @ 10 VApplications30 V 80 A4.0 mW

7.10. ntmfs4c09nt1g.pdf Size:93K _onsemi

NTMFS4C55N
NTMFS4C55N

NTMFS4C09NPower MOSFET30 V, 52 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseswww.onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant5.8 mW @ 10 VApplications30 V 52 A8.5 mW @

7.11. ntmfs4c09n.pdf Size:140K _onsemi

NTMFS4C55N
NTMFS4C55N

NTMFS4C09NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 52 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.8 mW @ 10 V30 V 52 ACompliant8.5 mW @ 4.5 VA

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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