Справочник MOSFET. NTMFS4C55N

 

NTMFS4C55N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: NTMFS4C55N

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 2.57 W

Предельно допустимое напряжение сток-исток (Uds): 30 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 2.2 V

Максимально допустимый постоянный ток стока (Id): 21.7 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 14 nC

Время нарастания (tr): 32 ns

Выходная емкость (Cd): 1215 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.0034 Ohm

Тип корпуса: SO-8

Аналог (замена) для NTMFS4C55N

 

 

NTMFS4C55N Datasheet (PDF)

1.1. ntmfs4c55n.pdf Size:79K _1

NTMFS4C55N
NTMFS4C55N

NTMFS4C55N Power MOSFET 30 V, 78 A, Single N-Channel, SO-8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses www.onsemi.com • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 3.4 mW @ 10 V • CPU Power Delive

3.1. ntmfs4c06n.pdf Size:138K _1

NTMFS4C55N
NTMFS4C55N

NTMFS4C06N MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 69 A Features www.onsemi.com • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 4.0 mW @ 10 V Compliant 30 V 69 A 6.0 mW @ 4.5 V A

3.2. ntmfs4c01n.pdf Size:113K _onsemi

NTMFS4C55N
NTMFS4C55N

NTMFS4C01N Power MOSFET 30 V, 0.9 mW, 303 A, Single N-Channel, SO-8FL Features • Small Footprint (5x6 mm) for Compact Design http://onsemi.com • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 0.9 mW @ 10 V 30 V 303 A 1.2 mW @

 3.3. ntmfs4c06n.pdf Size:93K _onsemi

NTMFS4C55N
NTMFS4C55N

NTMFS4C06N Power MOSFET 30 V, 69 A, Single N-Channel, SO-8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses www.onsemi.com • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 4.0 mW @ 10 V Applications 30 V 69 A • CPU P

3.4. ntmfs4c10n.pdf Size:88K _onsemi

NTMFS4C55N
NTMFS4C55N

NTMFS4C10N Power MOSFET 30 V, 46 A, Single N-Channel, SO-8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses www.onsemi.com • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 6.95 mW @ 10 V • CPU Power Delive

 3.5. ntmfs4c08n.pdf Size:91K _onsemi

NTMFS4C55N
NTMFS4C55N

NTMFS4C08N Power MOSFET 30 V, 52 A, Single N-Channel, SO-8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses www.onsemi.com • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Applications V(BR)DSS RDS(ON) MAX ID MAX • CPU Power Delivery 5.8 mW @ 10

3.6. ntmfs4c13n.pdf Size:116K _onsemi

NTMFS4C55N
NTMFS4C55N

NTMFS4C13N Power MOSFET 30 V, 38 A, Single N-Channel, SO-8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses http://onsemi.com • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 9.1 mW @ 10 V • CPU Power Del

3.7. ntmfs4c03n.pdf Size:115K _onsemi

NTMFS4C55N
NTMFS4C55N

NTMFS4C03N Power MOSFET 30 V, 2.1 mW, 136 A, Single N-Channel, SO-8FL Features • Small Footprint (5x6 mm) for Compact Design http://onsemi.com • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 2.1 mW @ 10 V 30 V 136 A 2.8 mW @

3.8. ntmfs4c05n.pdf Size:84K _onsemi

NTMFS4C55N
NTMFS4C55N

NTMFS4C05N Power MOSFET 30 V, 78 A, Single N-Channel, SO-8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses www.onsemi.com • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 3.4 mW @ 10 V 30 V 78 A • CPU P

3.9. ntmfs4c35n.pdf Size:117K _onsemi

NTMFS4C55N
NTMFS4C55N

NTMFS4C35N Power MOSFET 30 V, 80 A, Single N-Channel, SO-8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses http://onsemi.com • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 3.2 mW @ 10 V Applications 30 V 80 A 4.0 mW

3.10. ntmfs4c09nt1g.pdf Size:93K _onsemi

NTMFS4C55N
NTMFS4C55N

NTMFS4C09N Power MOSFET 30 V, 52 A, Single N-Channel, SO-8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses www.onsemi.com • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 5.8 mW @ 10 V Applications 30 V 52 A 8.5 mW @

3.11. ntmfs4c09n.pdf Size:140K _onsemi

NTMFS4C55N
NTMFS4C55N

NTMFS4C09N MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 52 A Features www.onsemi.com • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 5.8 mW @ 10 V 30 V 52 A Compliant 8.5 mW @ 4.5 V A

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