SVF4N60CAMJ Datasheet. Specs and Replacement

Type Designator: SVF4N60CAMJ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 86 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm

Package: TO-251J-3L

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SVF4N60CAMJ datasheet

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SVF4N60CAMJ

SVF4N60CAF/K/D/T/MN/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switc... See More ⇒

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SVF4N60CAMJ

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SVF4N60CAMJ

SVF4N60CAF/K/D/T/MN/MJ 4A 600V N SVF4N60CAF/K/D/T/MN/MJ N MOS F-CellTM VDMOS ... See More ⇒

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SVF4N60CAMJ

SVF4N60CAFJ 4A 600V N 2 SVF4N60CAFJ N MOS 1 F-CellTM VDMOS 3 1. 2. ... See More ⇒

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Detailed specifications: STP110N7F6, SUP85N03-07P, SUB85N03-07P, SVF4N60CAF, SVF4N60CAK, SVF4N60CAD, SVF4N60CAT, SVF4N60CAMN, 2N7000, UTC7N65L, WFP75N08, IPU105N03LG, IPU64CN10NG, IPF039N03LG, IPF090N03LG, 7N80L-TA3-T, 7N80L-TF3-T

Keywords - SVF4N60CAMJ MOSFET specs

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