SVF4N60CAMJ Datasheet and Replacement
Type Designator: SVF4N60CAMJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 86 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 55 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
Package: TO-251J-3L
SVF4N60CAMJ substitution
SVF4N60CAMJ Datasheet (PDF)
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SVF4N60CAF/K/D/T/MN/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switc
svf4n60caf svf4n60cak svf4n60cat svf4n60cadtr svf4n60camn svf4n60camj.pdf
SVF4N60CAF/K/D/T/MN/MJ 4A600V N 2 SVF4N60CAF/K/D/T/MN/MJ N MOS 13 F-CellTM VDMOS 1TO-252-2L3
svf4n60caf svf4n60cak svf4n60cad svf4n60cat svf4n60camn svf4n60camj.pdf
SVF4N60CAF/K/D/T/MN/MJ 4A600V N SVF4N60CAF/K/D/T/MN/MJ N MOS F-CellTM VDMOS
svf4n60cafj.pdf
SVF4N60CAFJ 4A600V N 2SVF4N60CAFJ N MOS 1 F-CellTM VDMOS 3 1. 2.
Datasheet: STP110N7F6 , SUP85N03-07P , SUB85N03-07P , SVF4N60CAF , SVF4N60CAK , SVF4N60CAD , SVF4N60CAT , SVF4N60CAMN , IRLZ44N , UTC7N65L , WFP75N08 , IPU105N03LG , IPU64CN10NG , IPF039N03LG , IPF090N03LG , 7N80L-TA3-T , 7N80L-TF3-T .
History: CS640F | PMCM4401VNE
Keywords - SVF4N60CAMJ MOSFET datasheet
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History: CS640F | PMCM4401VNE
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