IPU64CN10NG PDF and Equivalents Search

 

IPU64CN10NG Specs and Replacement


   Type Designator: IPU64CN10NG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 132 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.064 Ohm
   Package: TO251
 

 IPU64CN10NG substitution

   - MOSFET ⓘ Cross-Reference Search

 

IPU64CN10NG datasheet

 ..1. Size:781K  1
 ipd64cn10ng ipu64cn10ng.pdf pdf_icon

IPU64CN10NG

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Detailed specifications: SVF4N60CAK , SVF4N60CAD , SVF4N60CAT , SVF4N60CAMN , SVF4N60CAMJ , UTC7N65L , WFP75N08 , IPU105N03LG , IRF9540N , IPF039N03LG , IPF090N03LG , 7N80L-TA3-T , 7N80L-TF3-T , 7N80L-TF1-T , 7N80L-TQ2-R , 7N80L-TQ2-T , 7N80G-TA3-T .

Keywords - IPU64CN10NG MOSFET specs

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