7N80G-TQ2-R Datasheet and Replacement
Type Designator: 7N80G-TQ2-R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 142 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
Package: TO-263
7N80G-TQ2-R substitution
7N80G-TQ2-R Datasheet (PDF)
7n80l-ta3-t 7n80g-ta3-t 7n80l-tf3-t 7n80g-tf3-t 7n80l-tf1-t 7n80g-tf1-t 7n80l-tf2-t 7n80g-tf2-t 7n80l-tf3t-t 7n80g-tf3t-t 7n80l-tq2-t 7n80g-tq2-t 7n80l-tq2-r 7n80g-tq2-r.pdf

UNISONIC TECHNOLOGIES CO., LTD 7N80 Power MOSFET 7.0A, 800V N-CHANNEL POWER MOSFET 11TO-220 TO-220F DESCRIPTION The UTC 7N80 is a N-channel mode power MOSFET usingUTCs advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in 11allowing a minimum on-state resistance and superior switching TO-220F1 TO-220F2pe
7n80l-t 7n80g-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 7N80 Preliminary Power MOSFET 7.0 Amps, 800 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220The UTC 7N80 is an N-channel mode power MOSFET usingUTCs advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. Ita
Datasheet: 7N80L-TA3-T , 7N80L-TF3-T , 7N80L-TF1-T , 7N80L-TQ2-R , 7N80L-TQ2-T , 7N80G-TA3-T , 7N80G-TF3-T , 7N80G-TF1-T , RFP50N06 , 7N80G-TQ2-T , AO3419L , CMP100N04 , CMB100N04 , CMI100N04 , HY4306W , HY4306A , MDF1723 .
History: IRLHM630 | FDMS030N06B | SMD7N65 | FDB035AN06F085 | IRL620SPBF | TPW60R160M | IRFPE42
Keywords - 7N80G-TQ2-R MOSFET datasheet
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7N80G-TQ2-R replacement
History: IRLHM630 | FDMS030N06B | SMD7N65 | FDB035AN06F085 | IRL620SPBF | TPW60R160M | IRFPE42



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