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MDF1723 Specs and Replacement

Type Designator: MDF1723

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14.7 nS

Cossⓘ - Output Capacitance: 1830 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm

Package: TO-220F

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MDF1723 datasheet

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 mdf1723.pdf pdf_icon

MDF1723

MDF1723 Single N-channel Trench MOSFET 40V, 85A, 2.6m General Description Features The MDF1723 uses advanced MagnaChip s MOSFET V = 40V DS Technology, which provides high performance in on-state I = 85A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDF1723 is suitable device for Synchronous ... See More ⇒

Detailed specifications: 7N80G-TQ2-R, 7N80G-TQ2-T, AO3419L, CMP100N04, CMB100N04, CMI100N04, HY4306W, HY4306A, NCEP15T14, ME4410AD, ME4970, ME4970G, NDP04N60Z, PDEC3907Z, PFB2N60, PFF2N60, SI4947ADY

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