MDF1723 MOSFET. Datasheet pdf. Equivalent
Type Designator: MDF1723
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 34.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 85 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 88.3 nC
trⓘ - Rise Time: 14.7 nS
Cossⓘ - Output Capacitance: 1830 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
Package: TO-220F
MDF1723 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MDF1723 Datasheet (PDF)
mdf1723.pdf
MDF1723 Single N-channel Trench MOSFET 40V, 85A, 2.6m General Description Features The MDF1723 uses advanced MagnaChips MOSFET V = 40V DSTechnology, which provides high performance in on-state I = 85A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDF1723 is suitable device for Synchronous
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: GSM4925 | SDF85NA50JD
History: GSM4925 | SDF85NA50JD
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918