MDF1723 Datasheet and Replacement
Type Designator: MDF1723
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 34.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 85 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 14.7 nS
Cossⓘ - Output Capacitance: 1830 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
Package: TO-220F
MDF1723 substitution
MDF1723 Datasheet (PDF)
mdf1723.pdf

MDF1723 Single N-channel Trench MOSFET 40V, 85A, 2.6m General Description Features The MDF1723 uses advanced MagnaChips MOSFET V = 40V DSTechnology, which provides high performance in on-state I = 85A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDF1723 is suitable device for Synchronous
Datasheet: 7N80G-TQ2-R , 7N80G-TQ2-T , AO3419L , CMP100N04 , CMB100N04 , CMI100N04 , HY4306W , HY4306A , AON6380 , ME4410AD , ME4970 , ME4970G , NDP04N60Z , PDEC3907Z , PFB2N60 , PFF2N60 , SI4947ADY .
History: ET6300 | 2SK682 | SML901R3AN | AP2530AGY-HF | 2P308B9 | SUD50N06-08H | WMM22N50C4
Keywords - MDF1723 MOSFET datasheet
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History: ET6300 | 2SK682 | SML901R3AN | AP2530AGY-HF | 2P308B9 | SUD50N06-08H | WMM22N50C4



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