All MOSFET. NDP04N60Z Datasheet

 

NDP04N60Z Datasheet and Replacement


   Type Designator: NDP04N60Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 95 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 62 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO220AB
 

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NDP04N60Z Datasheet (PDF)

 ..1. Size:148K  1
 ndf04n60z ndp04n60z ndd04n60z.pdf pdf_icon

NDP04N60Z

NDF04N60Z, NDP04N60Z,NDD04N60ZN-Channel Power MOSFET1.8 W, 600 VoltsFeatureshttp://onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche TestedVDSS RDS(ON) (TYP) @ 2 A These Devices are Pb-Free and are RoHS Compliant600 V1.8 Applications Adapter (Notebook, Printer, Gaming) LCD Panel Power Lighting Ballasts4ABSOLUTE MAXIMUM RATINGS

 ..2. Size:130K  onsemi
 ndf04n60z ndp04n60z ndd04n60z.pdf pdf_icon

NDP04N60Z

NDF04N60Z, NDP04N60Z,NDD04N60ZN-Channel Power MOSFET600 V, 2.0 WFeatureshttp://onsemi.com Low ON Resistance Low Gate Charge ESD Diode-Protected GateVDSS RDS(on) (MAX) @ 2 A 100% Avalanche Tested600 V2.0 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantN-ChannelABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)D (

Datasheet: CMB100N04 , CMI100N04 , HY4306W , HY4306A , MDF1723 , ME4410AD , ME4970 , ME4970G , IRFZ24N , PDEC3907Z , PFB2N60 , PFF2N60 , SI4947ADY , STD180N4F6 , SUP65P06-20 , SUB65P06-20 , SVD3205T .

History: NVTJD4001N | 2SK888 | BUZ83 | SFF240J | P0803BDG | 2SJ605-Z | WMN30N80M3

Keywords - NDP04N60Z MOSFET datasheet

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