SVD3205T PDF and Equivalents Search

 

SVD3205T Specs and Replacement

Type Designator: SVD3205T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 101 nS

Cossⓘ - Output Capacitance: 781 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO-220

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SVD3205T datasheet

 ..1. Size:218K  1
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SVD3205T

SVD3205T_Datasheet 110A, 55V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD3205T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching per... See More ⇒

 ..2. Size:374K  silan
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SVD3205T

SVD3205T/F/S 110A 55V N 2 SVD3205T/F/S N MOS VDMOS 1 1 3 3 T... See More ⇒

Detailed specifications: NDP04N60Z, PDEC3907Z, PFB2N60, PFF2N60, SI4947ADY, STD180N4F6, SUP65P06-20, SUB65P06-20, 5N60, SVF12N65F, SVF12N65T, TSP50N06M, TSF50N06M, AOT2144L, AOTF12N65L, AOTF2144L, AOTF25S65L

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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