SVD3205T MOSFET. Datasheet pdf. Equivalent

   Type Designator: SVD3205T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 200 W
   Maximum Drain-Source Voltage |Vds|: 55 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 110 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 146 nC
   Rise Time (tr): 101 nS
   Drain-Source Capacitance (Cd): 781 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm
   Package: TO-220

SVD3205T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SVD3205T Datasheet (PDF)

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svd3205t.pdf

SVD3205T_Datasheet 110A, 55V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD3205T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryS-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching per

..2. Size:374K silan
svd3205t svd3205f svd3205s.pdf