SVD3205T Datasheet and Replacement
Type Designator: SVD3205T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 110 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 101 nS
Cossⓘ - Output Capacitance: 781 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO-220
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SVD3205T Datasheet (PDF)
svd3205t.pdf
SVD3205T_Datasheet 110A, 55V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD3205T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryS-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching per
svd3205t svd3205f svd3205s.pdf
SVD3205T/F/S 110A55V N 2SVD3205T/F/S N MOS VDMOS 1133 T
svd3205t svd3205f svd3205s svd3205str.pdf
SVD3205T(F)(S) 110A55V N 2SVD3205T/F/S N MOS VDMOS 11 3
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: ED7509 | IRLU9343PBF | 2SK3437 | JCS10N65FT | VS6038AD | 15NM70L-TF34-T | VST012N06MS
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History: ED7509 | IRLU9343PBF | 2SK3437 | JCS10N65FT | VS6038AD | 15NM70L-TF34-T | VST012N06MS
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