SVD3205T Specs and Replacement
Type Designator: SVD3205T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 101 nS
Cossⓘ - Output Capacitance: 781 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO-220
SVD3205T substitution
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SVD3205T datasheet
svd3205t.pdf
SVD3205T_Datasheet 110A, 55V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD3205T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching per... See More ⇒
svd3205t svd3205f svd3205s.pdf
SVD3205T/F/S 110A 55V N 2 SVD3205T/F/S N MOS VDMOS 1 1 3 3 T... See More ⇒
Detailed specifications: NDP04N60Z, PDEC3907Z, PFB2N60, PFF2N60, SI4947ADY, STD180N4F6, SUP65P06-20, SUB65P06-20, 5N60, SVF12N65F, SVF12N65T, TSP50N06M, TSF50N06M, AOT2144L, AOTF12N65L, AOTF2144L, AOTF25S65L
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