SVD3205T Datasheet and Replacement
Type Designator: SVD3205T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 101 nS
Cossⓘ - Output Capacitance: 781 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO-220
SVD3205T Datasheet (PDF)
svd3205t.pdf
SVD3205T_Datasheet 110A, 55V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD3205T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryS-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching per
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SVD3205T/F/S 110A55V N 2SVD3205T/F/S N MOS VDMOS 1133 T
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SVD3205T(F)(S) 110A55V N 2SVD3205T/F/S N MOS VDMOS 11 3
Datasheet: NDP04N60Z , PDEC3907Z , PFB2N60 , PFF2N60 , SI4947ADY , STD180N4F6 , SUP65P06-20 , SUB65P06-20 , 13N50 , SVF12N65F , SVF12N65T , TSP50N06M , TSF50N06M , AOT2144L , AOTF12N65L , AOTF2144L , AOTF25S65L .
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