SVF12N65F Datasheet and Replacement
Type Designator: SVF12N65F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 51 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 61.67 nS
Cossⓘ - Output Capacitance: 155 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO-220F
SVF12N65F substitution
SVF12N65F Datasheet (PDF)
svf12n65f svf12n65t.pdf

SVF12N65T/F_Datasheet 12A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF12N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch
svf12n65f svf12n65k svf12n65s svf12n65str.pdf

SVF12N65F/K/S 12A650V N 2SVF12N65F/K/S N MOS F-CellTM VDMOS 113 TO-263-2L3
svf12n65t svf12n65f.pdf

SVF12N65T/F 12A650V N 2SVF12N65T/F NMOSF-CellTMVDMOS 1 3
svf12n65cf svf12n65ck svf12n65cs svf12n65ckl svf12n65cfq.pdf

SVF12N65CF/K/S/KL/FQ 12A650V N SVF12N65CF/K/S/KL/FQ N MOS F-CellTM VDMOS A
Datasheet: PDEC3907Z , PFB2N60 , PFF2N60 , SI4947ADY , STD180N4F6 , SUP65P06-20 , SUB65P06-20 , SVD3205T , SKD502T , SVF12N65T , TSP50N06M , TSF50N06M , AOT2144L , AOTF12N65L , AOTF2144L , AOTF25S65L , BUZ31H3046 .
History: IRF3709ZLPBF | IRLR8729TR
Keywords - SVF12N65F MOSFET datasheet
SVF12N65F cross reference
SVF12N65F equivalent finder
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History: IRF3709ZLPBF | IRLR8729TR



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