SVF12N65F PDF and Equivalents Search

 

SVF12N65F Specs and Replacement

Type Designator: SVF12N65F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 51 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 61.67 nS

Cossⓘ - Output Capacitance: 155 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO-220F

SVF12N65F substitution

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SVF12N65F datasheet

 ..1. Size:586K  1
svf12n65f svf12n65t.pdf pdf_icon

SVF12N65F

SVF12N65T/F_Datasheet 12A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF12N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch... See More ⇒

 ..3. Size:444K  silan
svf12n65t svf12n65f.pdf pdf_icon

SVF12N65F

SVF12N65T/F 12A 650V N 2 SVF12N65T/F N MOS F-CellTM VDMOS 1 3 ... See More ⇒

 6.1. Size:489K  silan
svf12n65cf svf12n65ck svf12n65cs svf12n65ckl svf12n65cfq.pdf pdf_icon

SVF12N65F

SVF12N65CF/K/S/KL/FQ 12A 650V N SVF12N65CF/K/S/KL/FQ N MOS F-CellTM VDMOS A... See More ⇒

Detailed specifications: PDEC3907Z, PFB2N60, PFF2N60, SI4947ADY, STD180N4F6, SUP65P06-20, SUB65P06-20, SVD3205T, RFP50N06, SVF12N65T, TSP50N06M, TSF50N06M, AOT2144L, AOTF12N65L, AOTF2144L, AOTF25S65L, BUZ31H3046

Keywords - SVF12N65F MOSFET specs

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