TSF50N06M Specs and Replacement
Type Designator: TSF50N06M
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 47 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 450 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TO-220F
TSF50N06M substitution
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TSF50N06M datasheet
tsp50n06m tsf50n06m.pdf
TSP50N06M / TSF50N06M 60V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 50A, 60V, RDS(on) = 0.023 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 33nC) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avala... See More ⇒
Detailed specifications: SI4947ADY, STD180N4F6, SUP65P06-20, SUB65P06-20, SVD3205T, SVF12N65F, SVF12N65T, TSP50N06M, 18N50, AOT2144L, AOTF12N65L, AOTF2144L, AOTF25S65L, BUZ31H3046, DMG3N60SCT, DMN95H8D5HCT, DMP6180SK3-13
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: SI9410BDY-T1
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