TSF50N06M PDF and Equivalents Search

 

TSF50N06M Specs and Replacement

Type Designator: TSF50N06M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 47 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: TO-220F

TSF50N06M substitution

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TSF50N06M datasheet

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tsp50n06m tsf50n06m.pdf pdf_icon

TSF50N06M

TSP50N06M / TSF50N06M 60V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 50A, 60V, RDS(on) = 0.023 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 33nC) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avala... See More ⇒

Detailed specifications: SI4947ADY, STD180N4F6, SUP65P06-20, SUB65P06-20, SVD3205T, SVF12N65F, SVF12N65T, TSP50N06M, 18N50, AOT2144L, AOTF12N65L, AOTF2144L, AOTF25S65L, BUZ31H3046, DMG3N60SCT, DMN95H8D5HCT, DMP6180SK3-13

Keywords - TSF50N06M MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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