All MOSFET. TSF50N06M Datasheet

 

TSF50N06M Datasheet and Replacement


   Type Designator: TSF50N06M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 47 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 33 nC
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO-220F
 

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TSF50N06M Datasheet (PDF)

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TSF50N06M

TSP50N06M / TSF50N06M60V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Truesemis 50A, 60V, RDS(on) = 0.023 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 33nC)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avala

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: FQP8N80C | APT8065AVR

Keywords - TSF50N06M MOSFET datasheet

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