All MOSFET. TSF50N06M Datasheet

 

TSF50N06M Datasheet and Replacement


   Type Designator: TSF50N06M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 47 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO-220F
 

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TSF50N06M Datasheet (PDF)

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TSF50N06M

TSP50N06M / TSF50N06M60V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Truesemis 50A, 60V, RDS(on) = 0.023 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 33nC)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avala

Datasheet: SI4947ADY , STD180N4F6 , SUP65P06-20 , SUB65P06-20 , SVD3205T , SVF12N65F , SVF12N65T , TSP50N06M , 75N75 , AOT2144L , AOTF12N65L , AOTF2144L , AOTF25S65L , BUZ31H3046 , DMG3N60SCT , DMN95H8D5HCT , DMP6180SK3-13 .

History: SM3313PSQG | VS4401ATH | CEP02N7G | 2SK1967 | VBM1402 | 2SK65 | IRF6721S

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