All MOSFET. AOTF25S65L Datasheet

 

AOTF25S65L MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOTF25S65L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 26.4 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 87 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO-220F

 AOTF25S65L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOTF25S65L Datasheet (PDF)

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 aotf25s65l.pdf

AOTF25S65L AOTF25S65L

isc N-Channel MOSFET Transistor AOTF25S65LFEATURESDrain Current I = 25A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.19(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

 5.1. Size:311K  aosemi
 aotf25s65.pdf

AOTF25S65L AOTF25S65L

AOT25S65/AOB25S65/AOTF25S65TM650V 25A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT25S65 & AOB25S65 & AOTF25S65 have beenfabricated using the advanced MOSTM high voltage IDM 104Aprocess that is designed to deliver high levels of RDS(ON),max 0.19performance and robustness in switching applications. Qg,typ 26.4nCBy provi

 5.2. Size:250K  inchange semiconductor
 aotf25s65.pdf

AOTF25S65L AOTF25S65L

isc N-Channel MOSFET Transistor AOTF25S65FEATURESDrain Current I = 25A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.19(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

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 aotf256l.pdf

AOTF25S65L AOTF25S65L

AOTF256L150V N-Channel MOSFETGeneral Description Product SummaryVDS150VThe AOTF256L uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 12Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 8.2. Size:250K  inchange semiconductor
 aotf256l.pdf

AOTF25S65L AOTF25S65L

isc N-Channel MOSFET Transistor AOTF256LFEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 85m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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