AOTF25S65L. Аналоги и основные параметры
Наименование производителя: AOTF25S65L
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 40 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 25 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 30 ns
Cossⓘ - Выходная емкость: 87 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm
Тип корпуса: TO-220F
Аналог (замена) для AOTF25S65L
- подборⓘ MOSFET транзистора по параметрам
AOTF25S65L даташит
aotf25s65l.pdf
isc N-Channel MOSFET Transistor AOTF25S65L FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.19 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu
aotf25s65.pdf
AOT25S65/AOB25S65/AOTF25S65 TM 650V 25A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced MOSTM high voltage IDM 104A process that is designed to deliver high levels of RDS(ON),max 0.19 performance and robustness in switching applications. Qg,typ 26.4nC By provi
aot25s65 aob25s65 aotf25s65.pdf
AOT25S65/AOB25S65/AOTF25S65 TM 650V 25A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced MOSTM high voltage IDM 104A process that is designed to deliver high levels of RDS(ON),max 0.19 performance and robustness in switching applications. Qg,typ 26.4nC By provi
aotf25s65.pdf
isc N-Channel MOSFET Transistor AOTF25S65 FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.19 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur
Другие MOSFET... SVD3205T , SVF12N65F , SVF12N65T , TSP50N06M , TSF50N06M , AOT2144L , AOTF12N65L , AOTF2144L , STF13NM60N , BUZ31H3046 , DMG3N60SCT , DMN95H8D5HCT , DMP6180SK3-13 , FCH040N65S3 , FCH099N60E , FCH099N65S3 , FCP099N60E .
History: SM2331PSA | SM3303PSQG | BR13N50 | SM2416NSAN | SM1A27PSUB | KU2311K | SM2307PSA
History: SM2331PSA | SM3303PSQG | BR13N50 | SM2416NSAN | SM1A27PSUB | KU2311K | SM2307PSA
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