All MOSFET. DMG3N60SCT Datasheet

 

DMG3N60SCT MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMG3N60SCT
   Marking Code: 3N60SCT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 3.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12.6 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 41 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
   Package: TO-220AB

 DMG3N60SCT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMG3N60SCT Datasheet (PDF)

 ..1. Size:490K  1
dmg3n60sct.pdf

DMG3N60SCT DMG3N60SCT

DMG3N60SCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BVDSS RDS(ON) Package High BVDSS Rating for Power Application TC = +25C TO220AB Low Input/Output Leakage 600V 3.5@VGS = 10V 3.3A (Type TH) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Mechanica

 ..2. Size:251K  inchange semiconductor
dmg3n60sct.pdf

DMG3N60SCT DMG3N60SCT

isc N-Channel MOSFET Transistor DMG3N60SCTFEATURESStatic drain-source on-resistance:RDS(on) 3.5Fully characterized avalanche voltage and current100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONDC/DC ConverterMotor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

 6.1. Size:437K  diodes
dmg3n60sj3.pdf

DMG3N60SCT DMG3N60SCT

DMG3N60SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance BV I DSS DR Max DS(ON)(@ T Max) @T = +25C High BV Rating for Power Application J C DSS Low Input Capacitance 650V 2.8A 3.5 @ V = 10V GS Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3)

 6.2. Size:274K  inchange semiconductor
dmg3n60sj3.pdf

DMG3N60SCT DMG3N60SCT

isc N-Channel MOSFET Transistor DMG3N60SJ3FEATURESDrain Current I = 2.8A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 350m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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