DMG3N60SCT PDF and Equivalents Search

 

DMG3N60SCT Specs and Replacement

Type Designator: DMG3N60SCT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 41 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm

Package: TO-220AB

DMG3N60SCT substitution

- MOSFET ⓘ Cross-Reference Search

 

DMG3N60SCT datasheet

 ..1. Size:490K  1
dmg3n60sct.pdf pdf_icon

DMG3N60SCT

DMG3N60SCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BVDSS RDS(ON) Package High BVDSS Rating for Power Application TC = +25 C TO220AB Low Input/Output Leakage 600V 3.5 @VGS = 10V 3.3A (Type TH) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Mechanica... See More ⇒

 ..2. Size:251K  inchange semiconductor
dmg3n60sct.pdf pdf_icon

DMG3N60SCT

isc N-Channel MOSFET Transistor DMG3N60SCT FEATURES Static drain-source on-resistance RDS(on) 3.5 Fully characterized avalanche voltage and current 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION DC/DC Converter Motor Control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI... See More ⇒

 6.1. Size:437K  diodes
dmg3n60sj3.pdf pdf_icon

DMG3N60SCT

DMG3N60SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance BV I DSS D R Max DS(ON) (@ T Max) @T = +25 C High BV Rating for Power Application J C DSS Low Input Capacitance 650V 2.8A 3.5 @ V = 10V GS Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) ... See More ⇒

 6.2. Size:274K  inchange semiconductor
dmg3n60sj3.pdf pdf_icon

DMG3N60SCT

isc N-Channel MOSFET Transistor DMG3N60SJ3 FEATURES Drain Current I = 2.8A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 350m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p... See More ⇒

Detailed specifications: SVF12N65T, TSP50N06M, TSF50N06M, AOT2144L, AOTF12N65L, AOTF2144L, AOTF25S65L, BUZ31H3046, 2N60, DMN95H8D5HCT, DMP6180SK3-13, FCH040N65S3, FCH099N60E, FCH099N65S3, FCP099N60E, FCP125N60E, FCP165N60E

Keywords - DMG3N60SCT MOSFET specs

 DMG3N60SCT cross reference

 DMG3N60SCT equivalent finder

 DMG3N60SCT pdf lookup

 DMG3N60SCT substitution

 DMG3N60SCT replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 

 

↑ Back to Top
.