Справочник MOSFET. DMG3N60SCT

 

DMG3N60SCT Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: DMG3N60SCT
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 104 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3.3 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 22 ns
   Cossⓘ - Выходная емкость: 41 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 3.5 Ohm
   Тип корпуса: TO-220AB
 

 Аналог (замена) для DMG3N60SCT

   - подбор ⓘ MOSFET транзистора по параметрам

 

DMG3N60SCT Datasheet (PDF)

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DMG3N60SCT

DMG3N60SCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BVDSS RDS(ON) Package High BVDSS Rating for Power Application TC = +25C TO220AB Low Input/Output Leakage 600V 3.5@VGS = 10V 3.3A (Type TH) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Mechanica

 ..2. Size:251K  inchange semiconductor
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DMG3N60SCT

isc N-Channel MOSFET Transistor DMG3N60SCTFEATURESStatic drain-source on-resistance:RDS(on) 3.5Fully characterized avalanche voltage and current100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONDC/DC ConverterMotor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

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DMG3N60SCT

DMG3N60SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance BV I DSS DR Max DS(ON)(@ T Max) @T = +25C High BV Rating for Power Application J C DSS Low Input Capacitance 650V 2.8A 3.5 @ V = 10V GS Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3)

 6.2. Size:274K  inchange semiconductor
dmg3n60sj3.pdfpdf_icon

DMG3N60SCT

isc N-Channel MOSFET Transistor DMG3N60SJ3FEATURESDrain Current I = 2.8A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 350m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

Другие MOSFET... SVF12N65T , TSP50N06M , TSF50N06M , AOT2144L , AOTF12N65L , AOTF2144L , AOTF25S65L , BUZ31H3046 , IRF830 , DMN95H8D5HCT , DMP6180SK3-13 , FCH040N65S3 , FCH099N60E , FCH099N65S3 , FCP099N60E , FCP125N60E , FCP165N60E .

History: AO4480 | AM2324N | IXFL60N60 | CS13N65F | 2SJ220L | BL8N60-A | IRF322

 

 
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